AP2310GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BV 60V DSS D Small Package Outline R 90m DS(ON) Surface Mount Device I 3A D S RoHS Compliant SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- G effectiveness device. S The SOT-23 package is widely used for all commercial-industrial applications. Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage 60 V DS V Gate-Source Voltage +20 V GS 3 Continuous Drain Current , V 10V I T =25 3 A GS D A 3 Continuous Drain Current , V 10V I T =70 2.3 A GS D A 1 I Pulsed Drain Current 10 A DM P T =25 Total Power Dissipation 1.38 W D A Linear Derating Factor 0.01 W/ T Storage Temperature Range -55 to 150 STG T Operating Junction Temperature Range -55 to 150 J Thermal Data Symbol Parameter Value Unit 3 Rthj-a Maximum Thermal Resistance, Junction-ambient 90 /W Data and specifications subject to change without notice 1 201109093AP2310GN-HF o Electrical Characteristics T =25 C(unless otherwise specified) j Symbol Parameter Test Conditions Min. Typ. Max. Units BV Drain-Source Breakdown Voltage V =0V, I =250uA 60 - - V DSS GS D BV / T Breakdown Voltage Temperature Coefficient Reference to 25 , I =1mA - 0.05 - V/ DSS j D 2 R Static Drain-Source On-Resistance V =10V, I =3A - 70 90 m DS(ON) GS D V =4.5V, I =2A - 90 120 m GS D V Gate Threshold Voltage V =V , I =250uA 1 1.55 3 V GS(th) DS GS D g Forward Transconductance V =5V, I =3A - 5 - S fs DS D I Drain-Source Leakage Current uA DSS V =60V, V =0V - - 10 DS GS o Drain-Source Leakage Current (T=70 C) V =48V ,V =0V - - 25 uA j DS GS I nA Gate-Source Leakage V =+20V, V =0V - - +100 GSS GS DS 2 Q Total Gate Charge I =3A - 6 10 nC g D Q Gate-Source Charge V =48V - 1.6 - nC gs DS nC Q Gate-Drain Mille) Charge V =4.5V - 3 - gd GS 2 t Turn-on Delay Time V =30V - 6 - ns d(on) DS t Rise Time I =1A - 5 - ns r D ns t Turn-off Delay Time R =3.3 -16 - d(off) G ns t Fall Time V =10V - 3 - f GS pF C Input Capacitance V =0V - 550 880 iss GS pF C Output Capacitance V =15V - 70 - oss DS C Reverse Transfer Capacitance f=1.0MHz - 50 - pF rss R Gate Resistance f=1.0MHz - 1.1 2.2 g Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units 2 V Forward On Voltage I =1.2A, V =0V - - 1.2 V SD S GS 2 ns t Reverse Recovery Time I =3A, V =0V, - 25 - rr S GS Q Reverse Recovery Charge dI/dt=100A/s - 26 - nC rr Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board 270/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2