Advanced Power Electronics Corp. AP40T03GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Fast Switching Characteristics BV 30V DSS Low Gate Charge R 25m DS(ON) G RoHS-compliant, halogen-free I 28A D S Description G D Advanced Power MOSFETs from APEC provide the designer with the best S TO-252 (H) combination of fast switching, low on-resistance and cost-effectiveness. The AP40T03GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP40T03GJ-HF-3) is available where a small PCB footprint is required. G D TO-251 (J) S Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage 30 V DS V Gate-Source Voltage 25 V GS 3 I at T =25C Continuous Drain Current 28 A D C 3 I at T =100C Continuous Drain Current 24 A D C 1 I Pulsed Drain Current 95 A DM P at T =25C Total Power Dissipation 31.25 W D C Linear Derating Factor 0.25 W/C T Storage Temperature Range -55 to 150 C STG T Operating Junction Temperature Range -55 to 150 C J Thermal Data Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 4 C/W 3 62.5 C/W Rthj-a Maximum Thermal Resistance, Junction-ambient(PCB mount) 110 C/W Rthj-a Maximum Thermal Resistance, Junction-ambient Ordering Information AP40T03GH-HF-3TR RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) AP40T03GJ-HF-3TB RoHS-compliant halogen-free TO-251 shipped in tubes 2010 Advanced Power Electronics Corp. USA 200811034-3 1/6 www.a-powerusa.comAdvanced Power Electronics Corp. AP40T03GH/J-HF-3 Electrical Specifications at T =25C (unless otherwise specified) j Symbol Parameter Test Conditions Min. Typ. Max. Units BV Drain-Source Breakdown Voltage V =0V, I =250uA 30 - - V DSS GS D BV /Tj Breakdown Voltage Temperature Coefficient Reference to 25C, I =1mA - 0.032 - V/C DSS D 2 R Static Drain-Source On-Resistance V =10V, I =18A - - 25 m DS(ON) GS D V =4.5V, I =14A - - 45 m GS D V Gate Threshold Voltage V =V , I =250uA 1 - 3 V GS(th) DS GS D g Forward Transconductance V =10V, I =18A - 20 - S fs DS D I Drain-Source Leakage Current V =30V, V =0V - - 1 uA DSS DS GS o uA Drain-Source Leakage Current (T =150 C) V =24V, V =0V - - 25 j DS GS I Gate-Source Leakage V = 25V, V =0V - - 100 nA GSS GS DS 2 Q Total Gate Charge I =18A - 4 7 nC g D nC Q Gate-Source Charge V =20V - 1.5 - gs DS nC Q Gate-Drain Mille) Charge V =4.5V - 2.3 - gd GS 2 t Turn-on Delay Time V =15V - 6 - ns d(on) DS ns t Rise Time I =18A - 30 - r D ns t Turn-off Delay Time R =3.3, V =10V - 10 - d(off) G GS t Fall Time R =0.83 - 3 - ns f D pF C Input Capacitance V =0V - 270 430 iss GS pF C Output Capacitance V =25V - 70 - oss DS C Reverse Transfer Capacitance f=1.0MHz - 50 - pF rss Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units A I Continuous Source Current ( Body Diode ) V =V =0V , V =1.3V - - 28 S D G S 1 A I Pulsed Source Current ( Body Diode ) -- 95 SM 2 V Forward On Voltage T =25C, I =28A, V =0V - - 1.3 V SD j S GS Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse test - pulse width < 300s , duty cycle < 2% 2 3.Surface mounted on 1 in copper pad of FR4 board, THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2010 Advanced Power Electronics Corp. USA 2/6 www.a-powerusa.com