Advanced Power Electronics Corp. AP4435GH/J-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Fast Switching Characteristics BV -30V DSS Low On-Resistance R 20m DS(ON) G RoHS-compliant, halogen-free I -20A D S Description G D Advanced Power MOSFETs from APEC provide the designer with the best S TO-252 (H) combination of fast switching, low on-resistance and cost-effectiveness. The AP4435GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP4435GJ-HF-3) is available where a small PCB footprint is required. G D TO-251 (J) S Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage -30 V DS V Gate-Source Voltage 20 V GS 3 I at T =25C Continuous Drain Current -40 A D C 3 I at T =100C Continuous Drain Current -25 A D C 1 I Pulsed Drain Current -150 A DM P at T =25C Total Power Dissipation 44.6 W D C Linear Derating Factor 0.36 W/C T Storage Temperature Range -55 to 150 C STG T Operating Junction Temperature Range -55 to 150 C J Thermal Data Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 2.8 C/W 3 62.5 C/W Rthj-a Maximum Thermal Resistance, Junction-ambient(PCB mount) 110 C/W Rthj-a Maximum Thermal Resistance, Junction-ambient Ordering Information AP4435GH-HF-3TR RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) AP4435GJ-HF-3TB RoHS-compliant halogen-free TO-251 shipped in tubes (80pcs/tube) 2010 Advanced Power Electronics Corp. USA 200907154-3 1/6 www.a-powerusa.comAdvanced Power Electronics Corp. AP4435GH/J-HF-3 Electrical Specifications at T =25C (unless otherwise specified) j Symbol Parameter Test Conditions Min. Typ. Max. Units BV Drain-Source Breakdown Voltage V =0V, I =-250uA -30 - - V DSS GS D BV /Tj Breakdown Voltage Temperature Coefficient Reference to 25C, I =-1mA - -0.02 - V/C DSS D 2 Static Drain-Source On-Resistance V =-10V, I =-26A - - 20 m R DS(ON) GS D V =-4.5V, I =-16A - - 36 m GS D V Gate Threshold Voltage V =V , I =-250uA -1 - -3 V GS(th) DS GS D g Forward Transconductance V =-10V, I =-26A - 31 - S fs DS D I Drain-Source Leakage Current V =-30V, V =0V - - -1 uA DSS DS GS o Drain-Source Leakage Current (T =125 C) uA V =-24V, V =0V - - -250 j DS GS I nA Gate-Source Leakage V =20V, V =0V - - 100 GSS GS DS 2 Q Total Gate Charge I =-26A - 16.5 32 nC g D nC Q Gate-Source Charge V =-25V - 2.7 - gs DS nC Q Gate-Drain Mille) Charge V =-4.5V - 11 - gd GS 2 t Turn-on Delay Time V =-15V - 7.5 - ns d(on) DS Rise Time I =-26A - 64 - ns t r D ns t Turn-off Delay Time R =3.3 , V =-10V - 24 - d(off) G GS t Fall Time R =0.58 -92 - ns f D C Input Capacitance V =0V - 1160 1970 pF iss GS pF C Output Capacitance V =-25V - 195 - oss DS C Reverse Transfer Capacitance f=1.0MHz - 175 - pF rss R Gate Resistance f=1.0MHz - 5 17 g Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units 2 V Forward On Voltage I =-26A, V =0V - - -1.3 V SD S GS 2 t Reverse Recovery Time I =-10A, V =0V, - 25 - ns rr S GS Q Reverse Recovery Charge dI/dt=100A/s - 15 - nC rr Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse test - pulse width < 300s , duty cycle < 2% 2 3.Surface mounted on 1 in copper pad of FR4 board, THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2010 Advanced Power Electronics Corp. USA 2/6 www.a-powerusa.com