Advanced Power Electronics Corp. AP4501GM-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement D2 D2 N-CH BV 30V Low On-resistance DSS D1 D1 R 28m Fast Switching Performance DS(ON) G2 I 7A RoHS-compliant, halogen-free D S2 G1 S1 P-CH BV -30V SO-8 DSS R 50m DS(ON) I -5.3A Description D Advanced Power MOSFETs from APEC provide the designer with the best D1 D2 combination of fast switching, low on-resistance and cost-effectiveness. The AP4501GM-HF-3 is in a standard SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is G2 G1 well suited for applications such as DC and servo motor drives. S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel V Drain-Source Voltage 30 -30 V DS V Gate-Source Voltage 20 20 V GS 3 I at T =25C Continuous Drain Current 7.0 -5.3 A D A 3 I at T =70C Continuous Drain Current 5.8 -4.7 A D A 1 I Pulsed Drain Current 20 -20 A DM P at T =25C Total Power Dissipation 2.0 W D A Linear Derating Factor 0.016 W/C T Storage Temperature Range -55 to 150 C STG T Operating Junction Temperature Range -55 to 150 C J Thermal Data Symbol Parameter Value Unit 3 Rthj-a Maximum Thermal Resistance, Junction-ambient 62.5 C/W Ordering Information AP4501GM-HF-3TR RoHS-compliant, halogen-free SO-8, shipped on tape and reel (3000 pcs/reel) 2010 Advanced Power Electronics Corp. USA 201009015-3 1/8 www.a-powerusa.comAdvanced Power Electronics Corp. AP4501GM-HF-3 N-channel Electrical Specifications at T =25C (unless otherwise specified) j Symbol Parameter Test Conditions Min. Typ. Max. Units BV Drain-Source Breakdown Voltage V =0V, I =250uA 30 - - V DSS GS D 2 R Static Drain-Source On-Resistance V =10V, I =7A - - 28 m DS(ON) GS D V =4.5V, I =5A - - 42 m GS D V Gate Threshold Voltage V =V , I =250uA 1 - 3 V GS(th) DS GS D g Forward Transconductance V =10V, I =6A - 15 - S fs DS D I Drain-Source Leakage Current uA DSS V =30V, V =0V - - 1 DS GS V =24V, V =0V, Tj=70C - - 25 uA DS GS I nA GSS Gate-Source Leakage V =20V, V =0V - - 100 GS DS 2 nC Q Total Gate Charge I =6A - 8 13.5 g D nC Q Gate-Source Charge V =24V - 2 - gs DS nC Q Gate-Drain Mille) Charge V =4.5V - 4.5 - gd GS 2 ns t Turn-on Delay Time V =15V - 8 - d(on) DS ns t Rise Time I =1A - 5 - r D ns t Turn-off Delay Time R =3.3, V =10V - 19 - d(off) G GS t Fall Time R =15 - 5 - ns f D C Input Capacitance V =0V - 645 800 pF iss GS C Output Capacitance V =25V - 150 - pF oss DS C Reverse Transfer Capacitance f=1.0MHz - 95 - pF rss Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units 2 V Forward On Voltage I =7A, V =0V - - 1.2 V SD S GS 2 t Reverse Recovery Time I =6A, V =0V, - 19 - ns rr S GS Q Reverse Recovery Charge dI/dt=100A/s - 14 - nC rr Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle < 2%. 2 copper pad of FR4 board, t <10sec 135C/W when mounted on min. copper pad. 3.Surface mounted on 1 in THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2010 Advanced Power Electronics Corp. USA 2/8 www.a-powerusa.com