Advanced Power Electronics Corp. AP4525GEH-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement N-CH BV 40V Good Thermal Performance DSS D1/D2 R 28m Fast Switching Performance DS(ON) I 15A RoHS-compliant, halogen-free D S1 P-CH BV -40V G1 DSS S2 G2 R 42m DS(ON) TO-252-4L I -12A Description D Advanced Power MOSFETs from APEC provide the designer with the best D1 D2 combination of fast switching, low on-resistance and cost-effectiveness. G1 G2 The AP4525GEH-HF-3 is in a four-lead TO-252 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for applications such as DC and servo motor drives. S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel V Drain-Source Voltage 40 -40 V DS Gate-Source Voltage 16 16 V V GS 3 I at T =25C Continuous Drain Current 15.0 -12.0 A D A 3 I at T =70C Continuous Drain Current 12.0 -10.0 A D A 1 I Pulsed Drain Current 50 -50 A DM P at T =25C Total Power Dissipation 10.4 W D A Linear Derating Factor 0.083 W/C T Storage Temperature Range -55 to 150 C STG T Operating Junction Temperature Range -55 to 150 C J Thermal Data Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 12 C/W 3 Rthj-a Maximum Thermal Resistance, Junction-ambient 40 C/W Ordering Information AP4525GEH-HF-3TR RoHS-compliant TO-252-4L, shipped on tape and reel (3000 pcs/reel) No longer recommended for new designs - use AP4543GEH-HF-3TR 2010 Advanced Power Electronics Corp. USA 200809235-3 1/8 www.a-powerusa.comAdvanced Power Electronics Corp. AP4525GEH-HF-3 N-channel Electrical Specifications at T =25C (unless otherwise specified) j Symbol Parameter Test Conditions Min. Typ. Max. Units BV Drain-Source Breakdown Voltage V =0V, I =250uA 40 - - V DSS GS D BV /T Breakdown Voltage Temperature Coefficient Reference to 25C, I =1mA - 0.03 - V/C DSS j D 2 R Static Drain-Source On-Resistance V =10V, I =6A - - 28 m DS(ON) GS D V =4.5V, I =4A - - 32 m GS D V Gate Threshold Voltage V =V , I =250uA 1 - 3 V GS(th) DS GS D g Forward Transconductance V =10V, I =6A - 6 - S fs DS D I Drain-Source Leakage Current uA DSS V =40V, V =0V - - 1 DS GS o uA Drain-Source Leakage Current (T =70 C) V =32V, V =0V - - 25 j DS GS I uA GSS Gate-Source Leakage V =16V - - 30 GS 2 nC Q Total Gate Charge I =6A - 9 14 g D Gate-Source Charge V =20V - 1.5 - nC Q gs DS Q Gate-Drain Mille) Charge V =4.5V - 4 - nC gd GS 2 t Turn-on Delay Time V =20V - 7 - ns d(on) DS t Rise Time I =6A - 20 - ns r D t Turn-off Delay Time R =3 , V =10V - 20 - ns d(off) G GS t Fall Time R =3.3 - 4 - ns f D C Input Capacitance V =0V - 580 930 pF iss GS C Output Capacitance V =25V - 100 - pF oss DS C Reverse Transfer Capacitance f=1.0MHz - 70 - pF rss R Gate Resistance f=1.0MHz - 2 3 g Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units 2 V Forward On Voltage I =15A, V =0V - - 1.8 V SD S GS 2 t Reverse Recovery Time I =6A, V =0V - 20 - ns rr S GS Q Reverse Recovery Charge dI/dt=100A/s - 15 - nC rr Notes: 1. Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle < 2%. 3.Values are the same for both N-CH and P-CH MOSFETs, when mounted on 2oz FR4 board, t <10s. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2010 Advanced Power Electronics Corp. USA 2/8 www.a-powerusa.com