Advanced Power Electronics Corp. AP4578GH-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement N-CH BV 60V Good Thermal Performance DSS D1/D2 (tab) R 72m Fast Switching Performance DS(ON) I 9A RoHS-compliant, Halogen-free D S1 G1 P-CH BV -60V DSS S2 G2 R 125m DS(ON) TO-252-4L I -6A Description D Advanced Power MOSFETs from APEC provide the designer with the best D1 combination of fast switching, low on-resistance and cost-effectiveness. D2 The AP4578GH-HF-3 is in a standard TO-252 package, which is widely used for commercial and industrial surface-mount applications, and is G2 G1 well suited for applications such as DC and servo motor drives. S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel V Drain-Source Voltage 60 -60 V DS V Gate-Source Voltage 25 25 V GS 3 I at T =25C Continuous Drain Current 9 -6 A D A 3 I at T =70C Continuous Drain Current 6 -4 A D A 1 I Pulsed Drain Current 30 -30 A DM P at T =25C Total Power Dissipation 8.9 W D A Storage Temperature Range -55 to 150 C T STG T Operating Junction Temperature Range -55 to 150 C J Thermal Data Symbol Parameter Value Unit 3 Rthj-c Maximum Thermal Resistance, Junction-case 14 C/W 3 Rthj-a Maximum Thermal Resistance, Junction-ambient 110 C/W Ordering Information AP4578GH-HF-3TR : in RoHS-compliant, halogen-free TO-252-4L, shipped on tape and reel (3000 pcs/reel) 2011 Advanced Power Electronics Corp. USA 201108113-3 1/8 www.a-powerusa.comAdvanced Power Electronics Corp. AP4578GH-HF-3 N-channel Electrical Specifications at T =25C (unless otherwise specified) j Symbol Parameter Test Conditions Min. Typ. Max. Units BV Drain-Source Breakdown Voltage V =0V, I =250uA 60 - - V DSS GS D BV /T Breakdown Voltage Temperature Coefficient Reference to 25C, I =1mA - 0.05 - V/C DSS j D 2 R Static Drain-Source On-Resistance V =10V, I =5A - - 72 m DS(ON) GS D V =4.5V, I =3A - - 90 m GS D V Gate Threshold Voltage V =V , I =250uA 1 - 3 V GS(th) DS GS D g Forward Transconductance V =10V, I =5A - 8 - S fs DS D I Drain-Source Leakage Current uA V =60V, V =0V - - 10 DSS DS GS o uA Drain-Source Leakage Current (T =125 C) V =48V, V =0V - - 250 j DS GS I nA Gate-Source Leakage V =25V, V =0V - - 100 GSS GS DS 2 nC Q Total Gate Charge I =5A - 9 15 g D nC Q Gate-Source Charge V =48V - 2 - gs DS nC Q Gate-Drain Mille) Charge V =4.5V - 5 - gd GS 2 ns t Turn-on Delay Time V =30V - 7 - d(on) DS ns t Rise Time I =1A - 5 - r D ns t Turn-off Delay Time R =3.3 -21 - d(off) G ns t Fall Time V =10V - 5 - f GS pF C Input Capacitance V =0V - 750 1200 iss GS pF C Output Capacitance V =25V - 80 - oss DS pF C Reverse Transfer Capacitance f=1.0MHz - 60 - rss R Gate Resistance f=1.0MHz - 1.5 2.3 g Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units 2 V Forward On Voltage I =5A, V =0V - - 1.2 V SD S GS 2 t Reverse Recovery Time I =5A, V =0V - 33 - ns rr S GS Q Reverse Recovery Charge dI/dt=100A/s - 55 - nC rr Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle < 2%. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2011 Advanced Power Electronics Corp. USA 2/8 www.a-powerusa.com