X-On Electronics has gained recognition as a prominent supplier of AP70T03GH-HF-3TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. AP70T03GH-HF-3TR MOSFETs are a product manufactured by APEC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

AP70T03GH-HF-3TR APEC

AP70T03GH-HF-3TR electronic component of APEC
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Part No.AP70T03GH-HF-3TR
Manufacturer: APEC
Category: MOSFETs
Description: MOSFET, NCH, 30V, 9MOHM, TO-252
Datasheet: AP70T03GH-HF-3TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4967 ea
Line Total: USD 0.5 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4967
10 : USD 0.4634
25 : USD 0.3833
100 : USD 0.3357
250 : USD 0.3213
500 : USD 0.3092

   
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rds On
Rds On Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Operating Temperature Min
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We are delighted to provide the AP70T03GH-HF-3TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AP70T03GH-HF-3TR and other electronic components in the MOSFETs category and beyond.

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Advanced Power Electronics Corp. AP70T03GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Fast Switching Characteristics BV 30V DSS Low Gate Charge R 9m DS(ON) G RoHS-compliant, halogen-free I 60A D S D (tab) Description G D Advanced Power MOSFETs from APEC provide the designer with the best S TO-252 (H) combination of fast switching, low on-resistance and cost-effectiveness. The AP70T03GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP70T03GJ-HF-3) is D (tab) available where a small PCB footprint is required. G D S TO-251 (J) Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage 30 V DS V Gate-Source Voltage 20 V GS 3 I at T =25C Continuous Drain Current 60 A D C 3 I at T =100C Continuous Drain Current 43 A D C 1 I Pulsed Drain Current 195 A DM P at T =25C Total Power Dissipation 53 W D C Linear Derating Factor 0.36 W/C T Storage Temperature Range -55 to 175 C STG T Operating Junction Temperature Range -55 to 175 C J Thermal Data Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 2.8 C/W 3 Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 C/W 110 C/W Rthj-a Maximum Thermal Resistance, Junction-ambient Ordering Information AP70T03GH-HF-3TR : in RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) AP70T03GJ-HF-3TB : in RoHS-compliant halogen-free TO-251 shipped in tubes (80 pcs/tube) 2010 Advanced Power Electronics Corp. USA 200903055-3 1/6 www.a-powerusa.comAdvanced Power Electronics Corp. AP70T03GH/J-HF-3 Electrical Specifications at T =25C (unless otherwise specified) j Symbol Parameter Test Conditions Min. Typ. Max. Units BV Drain-Source Breakdown Voltage V =0V, I =250uA 30 - - V DSS GS D BV Breakdown Voltage Temperature Coefficient Reference to 25C, I =1mA - 0.03 - V/C Tj DSS/ D 2 R Static Drain-Source On-Resistance V =10V, I =33A - - 9 m DS(ON) GS D V =4.5V, I =20A - - 18 m GS D V Gate Threshold Voltage V =V , I =250uA 1 - 3 V GS(th) DS GS D g V =10V, I =33A - 35 - S fs DS D I Drain-Source Leakage Current uA DSS V =30V, V =0V - - 1 DS GS o Drain-Source Leakage Current (T =125 C) uA V =24V ,V =0V - - 250 j DS GS I nA GSS Gate-Source Leakage V = 20V, V =0V - - 100 GS DS 2 Q Total Gate Charge I =33A - 17 27 nC g D Q Gate-Source Charge V =20V - 5 - nC gs DS Q Gate-Drain Mille) Charge V =4.5V - 10 - nC gd GS Q Output Charge V =15V,V =0V - 13.5 22 nC oss DD GS 2 t Turn-on Delay Time V =15V - 8 - ns d(on) DS t Rise Time I =33A - 105 - ns r D t Turn-off Delay Time R =3.3, V =10V - 22 - ns d(off) G GS t Fall Time R =0.45 - 9 - ns f D C Input Capacitance V =0V - 1485 2400 pF iss GS C Output Capacitance V =25V - 245 - pF oss DS C Reverse Transfer Capacitance f=1.0MHz - 170 - pF rss Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units 2 V Forward On Voltage I =33A, V =0V - - 1.3 V SD S GS 2 ns t Reverse Recovery Time I =20A, V =0V, - 27 - rr S GS Q Reverse Recovery Charge dI/dt=100A/s - 20 - nC rr Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse test - pulse width < 300s , duty cycle < 2% 2 3.Surface mounted on 1 in copper pad of FR4 board, THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2010 Advanced Power Electronics Corp. USA 2/6 www.a-powerusa.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
ADVANCED POWER ELECTRONICS
ADVANCED POWER ELECTRONICS CORP
APEC(Advanced Power Elec)
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