AP90T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On- resistance BV 30V DSS D Simple Drive Requirement R 4m DS(ON) Fast Switching Characteristic I 75A D G S Description G The TO-252 package is widely preferred for commercial-industrial D S TO-252(H) surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP90T03GJ) is available for low-profile applications. G D S TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage 30 V DS V Gate-Source Voltage +20 V GS Continuous Drain Current, V 10V I T =25 75 A GS D C Continuous Drain Current, V 10V I T =100 63 A GS D C 1 I Pulsed Drain Current 350 A DM P T =25 Total Power Dissipation 96 W D C Linear Derating Factor 0.7 W/ T Storage Temperature Range -55 to 150 STG T Operating Junction Temperature Range -55 to 150 J Thermal Data Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 1.3 /W 3 Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 /W Data & specifications subject to change without notice 1 200901063AP90T03GH/J o Electrical Characteristics T =25 C(unless otherwise specified) j Symbol Parameter Test Conditions Min. Typ. Max. Units BV Drain-Source Breakdown Voltage V =0V, I =250uA 30 - - V DSS GS D 2 R Static Drain-Source On-Resistance V =10V, I =45A - - 4 m DS(ON) GS D V =4.5V, I =30A - - 6 m GS D V Gate Threshold Voltage V =V , I =250uA 0.8 - 3 V GS(th) DS GS D g Forward Transconductance V =10V, I =30A - 55 - S fs DS D I Drain-Source Leakage Current V =30V, V =0V - - 1 uA DSS DS GS o Drain-Source Leakage Current (T =125 C) uA V =24V, V =0V - - 250 j DS GS I nA Gate-Source Leakage V = +20V, V =0V - - +100 GSS GS DS 2 Q Total Gate Charge I =40A - 60 96 nC g D nC Q Gate-Source Charge V =24V - 8.5 gs DS nC Q Gate-Drain Mille) Charge V =4.5V - 38 gd GS 2 t Turn-on Delay Time V =15V - 14 - ns d(on) DS Rise Time I =30A - 83 - ns t r D ns t Turn-off Delay Time R =3.3,V =10V - 66 - d(off) G GS t Fall Time R =0.5 - 120 - ns f D C Input Capacitance V =0V - 4090 6540 pF iss GS pF C Output Capacitance V =25V - 1010 - oss DS C Reverse Transfer Capacitance f=1.0MHz - 890 - pF rss Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units 2 V Forward On Voltage I =45A, V =0V - - 1.3 V SD S GS 2 t Reverse Recovery Time I =30A, V =0V, - 51 - ns rr S GS Q Reverse Recovery Charge dI/dt=100A/s - 63 - nC rr Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2