Advanced Power Electronics Corp. AP9435GK-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low Gate Charge BV -30V DSS Fast Switching Characteristics R 50m DS(ON) G RoHS-compliant, Halogen-free I -6A D S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP9435GK-HF-3 is in the popular SOT-223 small surface-mount package S which is widely used in commercial and industrial applications where a small D board footprint is required. SOT-223 G This device is well suited for use in medium current applications such as load switches. Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage -30 V DS V Gate-Source Voltage 20 V GS 3 I at T =25C Continuous Drain Current -6 A D A 3 I at T = 70C -4.8 Continuous Drain Current A D A 1 I Pulsed Drain Current -20 A DM P at T =25C Total Power Dissipation 2.7 W D A T Storage Temperature Range -55 to 150 C STG T Operating Junction Temperature Range -55 to 150 C J Thermal Data Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 45 C/W Ordering Information AP9435GK-HF-3TR RoHS-compliant halogen-free SOT-223, shipped on tape and reel, 3000pcs/ reel 2011 Advanced Power Electronics Corp. USA 201106024-3 1/5 www.a-powerusa.comAdvanced Power Electronics Corp. AP9435GK-HF-3 Electrical Specifications at T =25C (unless otherwise specified) j Symbol Parameter Test Conditions Min. Typ. Max. Units BV Drain-Source Breakdown Voltage V =0V, I =-250uA -30 - - V DSS GS D 2 R Static Drain-Source On-Resistance V =-10V, I =-5.3A - - 50 m DS(ON) GS D V =-4.5V, I =-4.2A - - 100 m GS D V Gate Threshold Voltage V =V , I =-250uA -1 - -3 V GS(th) DS GS D g Forward Transconductance V =-10V, I =-4A - 4 - S fs DS D I Drain-Source Leakage Current uA DSS V =-30V, V =0V - - -1 DS GS o uA Drain-Source Leakage Current (T=70 C) V =-24V, V =0V - - -25 j DS GS I nA GSS Gate-Source Leakage V = 20V, V =0V - - 100 GS DS 2 nC Q Total Gate Charge I =-4A - 8 16 g D Q Gate-Source Charge V =-24V - 1.5 - nC gs DS nC Q Gate-Drain Mille) Charge V =-4.5V - 4 - gd GS 2 ns t Turn-on Delay Time V =-15V - 6.6 - d(on) DS t Rise Time I =-1A - 7.7 - ns r D ns t Turn-off Delay Time R =6 ,V =-10V - 22 - d(off) G GS ns t Fall Time R =15 - 9.3 - f D pF C Input Capacitance V =0V - 570 912 iss GS pF C Output Capacitance V =-25V - 80 - oss DS C Reverse Transfer Capacitance f=1.0MHz - 75 - pF rss Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units 2 V Forward On Voltage I =-2.3A, V =0V - - -1.2 V SD S GS trr Reverse Recovery Time I =-4A, V =0V, - 18 - ns S GS Qrr Reverse Recovery Charge dI/dt=100A/s - 10 - nC Notes: 1. Pulse width limited by maximum junction temperature. 2. Pulse test - pulse width < 300s , duty cycle < 2% 2 3. Surface mounted on 1in copper pad of FR4 board, t <10sec 120C/W when mounted on minimum copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2011 Advanced Power Electronics Corp. USA 2/5 www.a-powerusa.com