AP9938GEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 S2 Low on-resistance BV 20V S2 DSS D2 Capable of 1.8V Gate Drive R 18m G1 DS(ON) S1 S1 TSSOP-8 D1 Optimal DC/DC Battery Application I 6A D Halogen Free & RoHS Compliant Product Description D1 D2 Advanced Power MOSFETs from APEC provide the designer with G1 G2 the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage 20 V DS V Gate-Source Voltage +8 V GS 3 I T =25 Continuous Drain Current 6 A D A 3 I T =70 Continuous Drain Current 4.8 A D A 1 I Pulsed Drain Current 20 A DM P T =25 Total Power Dissipation 1 W D A T Storage Temperature Range -55 to 150 STG T Operating Junction Temperature Range -55 to 150 J Thermal Data Symbol Parameter Value Unit 3 Rthj-a Maximum Thermal Resistance, Junction-ambient 125 /W Data and specifications subject to change without notice 1 201210172AP9938GEO-HF o Electrical Characteristics T =25 C(unless otherwise specified) j Symbol Parameter Test Conditions Min. Typ. Max. Units BV Drain-Source Breakdown Voltage V =0V, I =250uA 20 - - V DSS GS D 2 R DS(ON) Static Drain-Source On-Resistance V =4.5V, I =6A - 14.9 18 m GS D V =2.5V, I =4A - 17.2 24 m GS D V =1.8V, I =2A - 19.9 28 m GS D V Gate Threshold Voltage V =V , I =250uA 0.3 - 1 V GS(th) DS GS D g Forward Transconductance V =5V, I =6A - 28 - S fs DS D I Drain-Source Leakage Current uA DSS V =16V, V =0V - - 10 DS GS I uA GSS Gate-Source Leakage V =+8V, V =0V - - +30 GS DS Q Total Gate Charge I =6A - 16 26 nC g D Q Gate-Source Charge V =10V - 1.6 - nC gs DS Q Gate-Drain Mille) Charge V =4.5V - 4.3 - nC gd GS t Turn-on Delay Time V =10V - 7 - ns d(on) DS t Rise Time I =1A - 11 - ns r D t Turn-off Delay Time R =3.3 -31 - ns d(off) G t Fall Time V =5V - 6 - ns f GS C Input Capacitance V =0V - 1070 1710 pF iss GS C Output Capacitance V =10V - 130 - pF oss DS C Reverse Transfer Capacitance f=1.0MHz - 115 - pF rss R Gate Resistance f=1.0MHz - 1.4 2.8 g Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units 2 V Forward On Voltage I =1.2A, V =0V - - 1.2 V SD S GS t Reverse Recovery Time I =6A, V =0V, - 14 - ns rr S GS Q Reverse Recovery Charge dI/dt=100A/s - 4 - nC rr Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board 208 /W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2