Product Information

BLM12P03-R

BLM12P03-R electronic component of Belling

Datasheet
30V 20A 10.6W 11.5mΩ@10V,10A P Channel PDFN-8(3.3x3.3) MOSFETs ROHS
Manufacturer: Belling
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3774 ea
Line Total: USD 0.38

1802 - Global Stock
Ships to you between
Wed. 29 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1329 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

BLM12P03-R
Belling

1 : USD 0.2908
10 : USD 0.2591
30 : USD 0.2454
100 : USD 0.2284
500 : USD 0.2209
1000 : USD 0.2164

Read More Specifications

     
Manufacturer
Product Category
Package
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif

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Additional Infomation About Product

The BLM12P03-R is a P-Channel PDFN-8 (3.3x3.3) MOSFET with 30V, 20A, 10.6W, 11.5mO@10V, 10A ratings, manufactured by Belling. It has an ESD rating of 1000V and a maximum drain-source on-state resistance of 10.6O. It is compliant with the Restriction of Hazardous Substances (RoHS) directive, which ensures its components are free from lead, cadmium, mercury, and certain flame retardants. This device is suitable for switching and modulating applications in a wide range of consumer electronics, automotive, and industrial systems.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Belling may also be referenced as

BL(Shanghai Belling)
Shanghai Belling

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