X-On Electronics has gained recognition as a prominent supplier of BLM2012E MOSFETs across the USA, India, Europe, Australia, and various other global locations. BLM2012E MOSFETs are a product manufactured by Belling. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BLM2012E Belling

Name: BLM2012E
Brand: Belling
SKU: BLM2012E_Belling
Availability: OutOfStock
Rating: 5 (11 reviews)

BLM2012E electronic component of Belling

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See Product Specifications

Part No.	BLM2012E
Manufacturer:	Belling
Category:	MOSFETs
Description:	MOSFET 2 N Channel (Dual) 20V 7A 900mV @ 250uA 21 mÎ© @ 6.5A,4.5V TSSOP-8 RoHS
Datasheet:	BLM2012E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.2048 ea
Line Total: USD 0.2

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

BLM2012E More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 22 Jan to Mon. 27 Jan MOQ : 1 Multiples : 1	1 : USD 0.2048 10 : USD 0.1663 30 : USD 0.1497 100 : USD 0.1291 500 : USD 0.1199 1000 : USD 0.0999

Specifications

Manufacturer Belling Belling
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package TSSOP - 8 TSSOP - 8
Brand Category Belling Belling
Fet Type 2 n channel(dual) 2 n channel(dual)
Drain To Source Voltagevdss 20 V 20 V
Continuous Drain Current Id @ 25°C 7 A 7 A
Vgsth Max @ Id 900mv @ 250ua 900mv @ 250ua
Rds On Max @ Id Vgs 21 m @ 6.5a,4.5v 21 m @ 6.5a,4.5v
Power Dissipation Max 1.5 W 1.5 W
Drain Source Voltage Vdss 20 V 20 V
Continuous Drain Current Id 7 A 7 A
Drain Source On Resistance Rdson@Vgs Id 21 mOhms @4.5V , 6.5A 21 mOhms @4.5V , 6.5A
Power Dissipation Pd 1.5 W 1.5 W
Gate Threshold Voltage Vgsth@Id 900 mV @250uA 900 mV @250uA
Type 2 N - Channel 2 N - Channel

We are delighted to provide the BLM2012E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLM2012E and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

-LeeThe BLM2012E MOSFET 2 N Channel (Dual) 20V 7A 900mV @ 250uA 21mO @ 6.5A,4.5V TSSOP-8 RoHS is a silicon-based transistor manufactured by Belling-Lee. It is a dual-channel MOSFET with a voltage threshold of 20V and current maximum of 7 amps. It also has a relatively low on-state resistance of 21ohm and a low gate-source threshold voltage of 4.5V. Additionally, it features a very low gate-source leakage current of only 250uA. This device is RoHS-compliant and packaged in a TSSOP-8 outline package. This small outline package is ideal for space limitations in applications such as DC/DC converters, motor control, and general switching applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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