X-On Electronics has gained recognition as a prominent supplier of SI2301S MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2301S MOSFETs are a product manufactured by Bourne. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2301S Bourne

Name: SI2301S
Brand: Bourne
SKU: SI2301S_Bourne
Availability: InStock
Rating: 5 (11 reviews)

Images are for reference only
See Product Specifications

Part No.	SI2301S
Manufacturer:	Bourne
Category:	MOSFETs
Description:	MOSFET P Trench 20V 2.3A 1V @ 250uA 210 mÎ© @ 1A,2.5V SOT-23 RoHS
Datasheet:	SI2301S Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0474 ea
Line Total: USD 0.47

Availability - 14598
Ship by Fri. 09 May to Wed. 14 May

MOQ: 10 Multiples: 10
Pack Size: 10

SI2301S More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

14598

Ship by Fri. 09 May to Wed. 14 May

MOQ : 10
Multiples : 10

10 : USD 0.0474
100 : USD 0.0368
300 : USD 0.031
3000 : USD 0.0182
6000 : USD 0.0162
9000 : USD 0.0151

Specifications

Manufacturer

Bourne Bourne

Product Category

MOSFETs MOSFETs

Brand

Bourne Bourne

Rohs

Y Y

Package

SOT - 23 SOT - 23

Fet Type

P Channel P Channel

Drain To Source Voltagevdss

20 V 20 V

Continuous Drain Current Id @ 25°C

2.3 A 2.3 A

Vgsth Max @ Id

1V @ 250uA 1V @ 250uA

Rds On Max @ Id Vgs

210mO @ 1A,2.5V 210mO @ 1A,2.5V

Power Dissipation-Max Ta 25°C

1 W 1 W

Drain Source Voltage Vdss

20 V 20 V

Continuous Drain Current Id

2.3 A 2.3 A

Drain Source On Resistance Rdson@Vgs Id

210 mOhms @2.5V , 1A 210 mOhms @2.5V , 1A

Power Dissipation Pd

1 W 1 W

Gate Threshold Voltage Vgsth@Id

1 V @250uA 1 V @250uA

Type

P Channel P Channel

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We are delighted to provide the SI2301S from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2301S and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2301S is a MOSFET transistor device manufactured by Bourns. It is constructed from a P-channel trench MOSFET which is rated for 20V of operation and has a maximum continuous current of 2.3A. The on-resistance for this device is 210mÎ© @ 1A (maximum) and 1V @ 250uA. This device comes in an SOT-23 package with RoHS compliance.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

BORN may also be referenced as

Bourne Semicon (Shenzhen)

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Availability	Price	Buy Price	Quantity
14598 Ship by Fri. 09 May to Wed. 14 May MOQ : 10 Multiples : 10	10 : USD 0.0474 100 : USD 0.0368 300 : USD 0.031 3000 : USD 0.0182 6000 : USD 0.0162 9000 : USD 0.0151

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