BDW83C Bourns

BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS l Designed for Complementary Use with SOT-93 PACKAGE BDW84, BDW84A, BDW84B, BDW84C and (TOP VIEW) BDW84D B 1 l 125 W at 25C Case Temperature l 15 A Continuous Collector Current C 2 l Minimum h of 750 at 3 V, 6 A FE 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BDW83 45 BDW83A 60 Collector-base voltage (I = 0) BDW83B V 80 V E CBO BDW83C 100 BDW83D 120 BDW83 45 BDW83A 60 Collector-emitter voltage (I = 0) (see Note 1) BDW83B V 80 V B CEO BDW83C 100 BDW83D 120 Emitter-base voltage V 5 V EBO Continuous collector current I 15 A C Continuous base current I 0.5 A B Continuous device dissipation at (or below) 25C case temperature (see Note 2) P 125 W tot Continuous device dissipation at (or below) 25C free air temperature (see Note 3) P 3.5 W tot 2 Unclamped inductive load energy (see Note 4) LI 100 mJ C Operating junction temperature range T -65 to +150 C j Operating temperature range T -65 to +150 C stg Operating free-air temperature range T -65 to +150 C A NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150C case temperature at the rate of 1 W/C. 3. Derate linearly to 150C free air temperature at the rate of 28 mW/C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I = 5 mA, R = 100 , B(on) BE V = 0, R = 0.1 , V = 20 V. BE(off) S CC PRODUCT INFORMATION AUGUST 1978 - REVISED JUNE 2011 1 Specifications are subject to change without notice.BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT BDW83 45 BDW83A 60 Collector-emitter V I = 30 mA I = 0 (see Note 5) BDW83B 80 V (BR)CEO C B breakdown voltage BDW83C 100 BDW83D 120 V = 30 V I =0 BDW83 1 CE B V = 30 V I =0 BDW83A 1 CE B Collector-emitter I V = 40 V I =0 BDW83B 1 mA CEO CE B cut-off current V = 50 V I =0 BDW83C 1 CE B V = 60 V I =0 BDW83D 1 CE B V = 45 V I =0 BDW83 0.5 CB E V = 60 V I =0 BDW83A 0.5 CB E V = 80 V I =0 BDW83B 0.5 CB E V = 100 V I =0 BDW83C 0.5 CB E Collector cut-off V = 120 V I =0 BDW83D 0.5 CB E I mA CBO current V = 45 V I =0 T = 150C BDW83 5 CB E C V = 60 V I =0 T = 150C BDW83A 5 CB E C V = 80 V I =0 T = 150C BDW83B 5 CB E C V = 100 V I =0 T = 150C BDW83C 5 CB E C V = 120 V I =0 T = 150C BDW83D 5 CB E C Emitter cut-off I V = 5 V I =0 2 mA EBO EB C current Forward current V = 3 V I = 6 A 750 20000 CE C h (see Notes 5 and 6) FE transfer ratio V = 3 V I = 15 A 100 CE C Base-emitter V V = 3 V I = 6 A (see Notes 5 and 6) 2.5 V BE(on) CE C voltage Collector-emitter I = 12 mA I = 6 A 2.5 B C V (see Notes 5 and 6) V CE(sat) saturation voltage I = 150 mA I = 15 A 4 B C Parallel diode V I = 15 A I = 0 3.5 V EC E B forward voltage NOTES: 5. These parameters must be measured using pulse techniques, t = 300 s, duty cycle 2%. p 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN TYP MAX UNIT R Junction to case thermal resistance 1 C/W JC R Junction to free air thermal resistance 35.7 C/W JA resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT t Turn-on time I = 10 A I = 40 mA I = -40 mA 0.9 s on C B(on) B(off) t Turn-off time V = -4.2 V R = 3 t = 20 s, dc 2% 7 s off BE(off) L p Voltage and current values shown are nominal exact values vary slightly with transistor parameters. PRODUCT INFORMATION AUGUST 1978 - REVISED JUNE 2011 2 Specifications are subject to change without notice.