ALM-38140 50MHz 4GHz PIN Diode Variable Attenuator Module Data Sheet Description Features Avago Technologies ALM-38140 is a fully matched Fully integrated module wideband variable attenuator module with high linearity High dynamic range performance and high dynamic range. The high dynamic Excellent Input IP3 performance range and low phase shift can be achieved with only one external inductor place between Linput and Loutput. High Input P1dB compression Low phase shift performance ALM-38140 is a fully integrated solution using Avago Technologies low distortion silicon PIN diodes housed in Tape-and-Reel packaging option available 3 a miniature 3.8 x 3.8 x 1.0 mm MCOB (Multiple-Chips-On- Board) package. Specifications This variable attenuator module is easily operated with Typical Performance at 1.9GHz a constant voltage, Vsupply = 2.7V and a control voltage, Attenuation : 39dB Vcontrol = 0.8 5V. No external biasing components Insertion Loss : 3.2dB needed. Input IP3 : 50dBm ALM-38140 is ideal for gain control in RF amplifier Input P1dB : > 30dBm circuits. Applications Package Marking Broadband system applications such as CATV, WCDMA, VSAT, WIMAX, Cellular base station. General purpose voltage controlled attenuator for low current applications. Temperature compensation circuitry 38140 RF 2 RF 1 Automatic Gain Control GND WWYY XXXX Vsupply Top View Bottom View Attention: Observe precautions for Note: handling electrostatic sensitive devices. Package marking provides orientation and identification ESD Machine Model = 300 V 38140 = Device Part Number WWYY = Work week and year of manufacture ESD Human Body Model = 900 V XXXX = Last 4 digit of assembly lot number Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. * RF1 and RF2 can be used either as RF input or RF output as they are symmetrical. Vcontrol Loutput Linput 1 ALM-38140 Absolute Maximum Rating T = 25C A 2 Symbol Parameter Unit Absolute Maximum Thermal Resistance = 106.3C/W jc (Vc = 1V, Vsupply = 2.7V, Tc = 85C) I Supply Current mA 18.0 supply, max Notes: I Control Current mA 33.4 control, max 1. Operation in excess of any one of these limits may result in permanent damage to the P RF Input Power dBm 27dBm CW, 36dBm with in, max device. 12.5% duty cycle 2. Thermal resistance is measured from junction to case using Infra-Red method. P Total Power Dissipation W 0.3 diss T Junction Temperature C 150 j T Storage Temperature C -60 to 150 stg Electrical Specifications, Vsupply = 2.7V, T = 25C, Z = 50 A 0 Symbol Parameter and Test Condition Frequency (MHz) Unit Min Typ Max I Supply Current drain (V = 1V) mA 2.5 supply control I Control Current drain (V = 5V) mA 20.5 control control S21 Maximum Attenuation (V = 1V) 900 dB 42.0 control S21 Maximum Attenuation (V = 1V) 1900 dB 36.0 39.0 control S21 Insertion Loss (V = 5V) 900 dB 2.8 control S21 Insertion Loss (V = 5V) 1900 dB 3.2 3.7 control Dynamic Range 900 dB 38 Dynamic Range 1900 dB 33 36.5 IRL Input Return Loss (V = 5V) 1900 dB 10 14.5 control ORL Output Return Loss (V = 5V) 1900 dB 10 13.5 control 5 IIP3 Input Third Order Intercept Point 900 dBm 50 5 IIP3 Input Third Order Intercept Point 1900 dBm 50 6 IP1dB Input Power at P1dB Compression (V = 5V) 900 dBm 32 control 6 IP1dB Input Power at P1dB Compression (V = 5V) 1900 dBm 33 control Phase Shift (V = 1V) 1900 degrees 10.5 control Notes: 4. Data above is obtained using demo board shown in Figure 32 and 33. 5. 2-tone IIP3 test condition: F , F = 1.1MHz separation, Input power = 22dBm RF1 RF2 6. IP1dB measured with 12.5% duty cycle. 7. The performance above obtained with phase compensation inductor value based on the table 1 below. 8. Use proper biasing, heat sink and de-rating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note (if applicable) for more details. 2