ALM-GA001 High-Gain, Low Current Low Noise Amplifier with Variable Current and Shutdown Function Data Sheet Description Features Operating temperature range -40 to +85 C Avago Technologies ALM-GA001 is a low-noise amplifier (LNA) designed for GPS/ISM/WiMAX applications in the Very Low Noise Figure : 0.97 dB typical (0.9-3.5) GHz frequency range. The LNA uses Avago Tech- High Gain : 17.9 dB typical nologies proprietary GaAs Enhancement-mode pHEMT High IIP3 and IP1dB process to achieve high gain with very low noise figure and high linearity. Noise figure distribution is very tightly Advanced GaAs E-pHEMT controlled. A CMOS-compatible shutdown pin is included Low external component count either for turning the LNA on/off, or for current adjust - Shutdown current : < 5 A ment. CMOS compatible shutdown pin (SD) current at 2.7 V The low noise figure and high gain, coupled with low cur - drawing 80 A rent consumption make it suitable for use in critical low- power GPS applications or during low-battery operation. Useable down to 1.8 V supply Adjustable current via single external resistor/voltage Component Image 3 Small package dimension: 1.5(L)x1.2(W)x0.5(H) mm 3 Surface Mount 1.5x1.2x0.5 mm 6-lead uDFN Specifications (Typical performance 25C) At 1.575GHz PIN 1 PIN 6 Vdd = 2.7V, Vsd = 2.7V, Idd = 3.3mA, AY PIN 2 PIN 5 Gain = 17.9 dB WW NF = 0.97 dB PIN 3 PIN 4 IIP3 = -2.0 dBm, IP1dB = -9.7 dBm Top View S11 = -9.3 dB, S22 =-13 dB Vdd = 3.3V, Vsd = 3.3V, Idd = 6.0 mA, Gain = 19.6 dB PIN 6: NC PIN 1: Vsd NF = 0.87 dB IIP3 = -0.2 dBm, IP1dB = -8.7 dBm PIN 5: RFout/Vdd PIN 2: RFin GND S11 = -9.5 dB, S22 =-20 dB 1 PIN 4: NC PIN 3: NC Application Bottom View LNA for GPS, Cellular, PCS , UMTS, WLAN, WiMAX, LTE Note: applications. Package marking provides orientation and identification Vsd Vdd AY = Product Code WW = Work Week 1 PIN 3 must be left unconnected C2 Attention: Observe precautions for han- L3 BIAS CIRCUIT dling electrostatic sensitive devices. L1 ESD Machine Model = 50 V ESD Human Body Model = 250 V RF in C1 RF out Refer to Avago Application Note A004R: L2 Electrostatic Discharge, Damage and Control. 1 Absolute Maximum Rating T = 25C A (6) Symbol Parameter Units Absolute Max. Thermal Resistance (Vdd = 2.7V, Idd = 3.3mA) 2 Vdd Device Drain to Source Voltage V 4 = 185.0C/W jc 2 Idd Drain Current mA 15 Notes: P CW RF Input Power (Vdd = 2.7V, Idd = 3.3mA) dBm 13 in,max 6. Thermal resistance measured 3 using Infra-Red measurement P Total Power Dissipation mW 60 diss technique. 4 5 T Recommended Operating Temperature C -40 to +85 c T Junction Temperature C 150 j T Storage Temperature C -65 to 150 STG Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Assuming DC quiescent conditions. 3. Board (module belly) temperature TB is 25C. Derate 5.4 mW/C for Tb > 138.9C. 4. T is defined as case temperature, the temperature of the underside of the device where it makes contact with the circuit board. c 5. The device will function over the recommended range without degradation in reliability or permanent change in performance, but is not guaranteed to meet the electrical specification. 2