ALM-GA002 GPS Low Noise Amplifier Variable Current/Shutdown Function Data Sheet Description Features Operating temperature range -40 to +85 C Avago Technologiess ALM-GA002 is a LNA designed for GPS/ISM/Wimax applications in the (0.9-2.4)GHz 3 Surface Mount 2.0 x 2.0 x 1.1 mm MCOB frequency range. The LNA uses Avago Technologiess Advanced GaAs E-pHEMT proprietary GaAs Enhancement-mode pHEMT process to Low Noise: 0.8 dB typ achieve high gain operation with very low noise figures High Gain: 14.3 dB typ and high linearity. Noise figure distribution is very tightly controlled. Gain and supply current are guaranteed pa- Low component count rameters. A CMOS compatible shutdown pin is included High IIP3 and IP1dB to turn the LNA off and provide a variable bias. Wide Supply Voltage: 1 V to 3.6 V The ALM-GA002 LNA is usable down to 1 V operation. Shutdown current: < 0.1 A It achieves low noise figures and high gain even at 1V, CMOS compatible shutdown pin (VSD) current 2.85 making it suitable for use in critical low power GPS/ISM V: 90 A band applications. Adjustable bias current via one single external resistor/ Package Marking and Orientation voltage 2 Small Footprint: 2x2 mm Note: Package marking Low Profile: 1.1 mm typ. O provides Orientation Lead-free and Halogen-free and identication: BY B = Product Code Ext matching for non-GPS freq band operation Y = Year WW WW = Work Week Specifications (25 deg): Top View At 1.575GHz, 2.85 V 8 mA (Typ) Gain = 14.3 dB (Typ) Pin Configuration NF = 0.8 dB (Typ) LNA I/Os : Pin 6 Pin 1 IIP3 = 4.7 dBm (Typ) 1. NC 2. RF IN IP1dB = 1.8 dBm (Typ) Pin 5 GND Pin 2 3. NC 4. VSD S11 = -11.8 dB (Typ) 5. RF OUT S22 = -12.4 dB (Typ) Pin 4 Pin 3 6. VDD Note: Measurements obtained using demoboard described in Figure 4. Bottom View Simplified Schematic VSD VDD BIAS RF IN RF OUT C C C1 C2 Amplier2 AMP1 1 Absolute Maximum Ratings Symbol Parameter Units Absolute Maximum 2 V Drain Source Voltage V 3.6 DS 2 I 2G Drain Current mA 15 DS 3 Pdiss Total Power Dissipation mW 54 Pin max. RF Input Power dBm +10 T Channel Temperature C 150 CH T Storage Temperature C -65 to 150 STG 4 q Thermal Resistance C/W 232 ch b Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assuming DC quiescent conditions. 3. Board (package belly) temperature T is 25C. Derate 4.32mW/C for T > 137C. B B 4. Channel-to-board thermal resistance measured using 150C Liquid Crystal Measurement method. Electrical Specifications T = 25C, DC bias for RF parameter is VDD = VSD = +2.85V 8mA (unless otherwise specified) A Table 1. Performance table at nominal operating conditions VDD= VSD = +2.85V, R1 = 18K Ohm, Freq=1.575GHz Typical Performance Symbol Parameter and Test Condition Units Min. Typ Max. G Gain dB 14.3 NF Noise Figure dB 0.8 IP1dB Input 1dB Compressed Power dBm 1.8 rd IIP3 Input 3 Order Intercept Point dBm 4.7 (2-tone Fc +/- 2.5MHz) S11 Input Return Loss dB -11.8 S22 Output Return Loss dB - 12.4 Ids Supply Current mA 8 Ish Shutdown Current VSD = 0V uA 0.1 Vds Supply Voltage V 2.85 IP1dB Out of Band IP1dB (DCS 1710MHz) blocking dBm 2.9 1710M IIP3 Out of Band IIP3 (DCS 1775MHz & 1950MHz) dBm 5.5 OUT Table 2. Typical performance at low operation voltages with R1 (see Fig 2) set to 0 Ohm VDD = +2V, VDD= +1.5V & VDD= +1.0V, Freq=1.575GHz Typical Performance (VSD=VDD, R1=0 Ohm) Symbol Parameter and Test Condition Units VDD = 2V VDD = 1.5V VDD = 1.0V G Gain dB 15 14.2 12.3 NF Noise Figure dB 0.8 0.9 1 IP1dB Input 1dB Compressed Power dBm -1.4 -2.4 -3.8 rd IIP3 Input 3 Order Intercept Point dBm 7.3 4.9 5.2 (2-tone Fc +/- 2.5MHz) S11 Input Return Loss dB -13.8 -11.5 -8 S22 Output Return Loss dB -15.5 -14.5 -11.7 Ids Supply Current mA 13 7.5 3.6 Ish Shutdown Current VSD = 0V uA 0.1 0.1 0.1 Vds Supply Voltage V 2 1.5 1.0 IP1dB Out of Band IP1dB (DCS 1710MHz) blocking dBm -0.3 -1.9 -2.9 1710M IIP3 Out of Band IIP3 (DCS 1775MHz & 1950MHz) dBm 8.7 5.8 3 OUT 2