AMMC-2008
DC 50 GHz SPDT Switch
Data Sheet
Chip Size: 930 x 630 m (36.6 x 24.8 mils)
Chip Size Tolerance: 10 m (0.4 mils)
Chip Thickness: 100 10 m (4 0.4 mils)
Pad Dimensions: 80 x 80 m (3.2 x 3.2 mils)
Description
Features
Wide frequency range: DC 50 GHz
Avagos AMMC-2008 is a monolithic PHEMT SPDT switch
with low insertion loss and high isolation from DC to 50
Single pole double throw switch
GHz. This MMIC is designed for general-purpose applica-
Low insertion loss: 2.3 dB (max.) at 40 GHz
tions. For improved reliability and moisture protection,
High isolation: 25 dB (min.) at 40 GHz
the die is passivated at the active areas. One series and
two shunt PHEMTs per throw provide 2.0 dB insertion loss
Medium input power: P : +14 dBm
-1dB
and 28 dB isolation at 40 GHz.
Applications
[1] Instrumentation
Absolute Maximum Ratings
Communications
Symbol Parameters/Conditions Units Min. Max.
Radar
V Select Voltages 1 & 2 V -8 +1.4
sel
ECM
P RF Input Power dBm +20
in
EW
T Die Backside Temperature C +140
b
Fiber optics
T Storage Temperature C -65 +165
stg
Pulse modulation
T Max. Assembly Temp C +300
max
Port isolation
(60 sec max)
Transfer switching
Note:
1. Operation in excess of any one of these conditions may result in
High speed switching
permanent damage to this device.
Replacement of mechanical switches[1]
AMMC-2008 DC Specifications
Symbol Parameters and Test Conditions Units Min. Typ. Max.
I Leakage Current at V = +0 V, V = -3 V A 20
sel1 sel1 sel2
I Leakage Current at V = -3 V, V = +0 V A -20
sel1 sel1 sel2
I Leakage Current at V = +0 V, V = -3 V A 20
sel2 sel2 sel1
I Leakage Current at V = -3 V, V = +0 V A -20
sel2 sel2 sel1
Note:
1. Backside temperature T = 25C unless otherwise noted.
b
[1,2]
RF Specifications (Z = Z = 50, V = -3V, V = 0V)
in out sel1 sel2
Symbol Parameters and Test Conditions Freq. Units Min. Typ. Max.
IL Insertion Loss, RF to RF (ON throw) 2 GHz dB 1.6 2
in out
25 GHz 1.6 2
40 GHz 2.0 2.3
ISO Isolation, RF to RF (OFF throw) 2 GHz dB 46 49
in out
25 GHz 30 35
40 GHz 25 28
RL Input Return Loss 2 GHz dB 15 16.5
in
40 GHz 15 23
RL Output Return Loss (ON throw) 2 GHz dB 15 16.5
out-on
40 GHz 15 18
RL Output Return Loss (OFF throw) 2 GHz dB 4.5
out-off
40 GHz 4.5
P Input Power at 1 dB Gain Compression 25 GHz dBm +14
-1dB
H 2nd Harmonic, P = +5 dBm 2 GHz dBc -48 -45
2 out
12 GHz -43 -40
H 3rd Harmonic, P = +5 dBm 2 GHz dBc -60 -50
3 out
12 GHz -60 -50
IP3 Input 3rd Order Intercept Point, dBm 2 GHz +27 +32
RF =RF = +5 dBm, f = 2 MHz 12 GHz +27 +32
in1 in2
[3]
Control Switching Speed
10% 90% rise time ps 100
90% 10% fall time ps 90
Notes:
1. Data measured in wafer form, T = 25C.
chuck
2. 100% on-wafer RF test is done at frequency = 2, 10, 20, 30 and 40 GHz, except as noted.
3. Typical Vsel switching speed measured using Pulse Generator Model PG5000A. Measurement limited to rise/fall time of Pulse Generator.
2