MGA-31189 0.25W High Gain Driver Amplifier 50 2000 MHz Data Sheet Description Features Avago Technologies MGA-31189 is a 0.25W high gain ROHS compliant with good gain flatness Driver Amplifier MMIC, housed Halogen free in a standard SOT-89 plastic package. The device features 1 Very high linearity at low DC bias power high linearity performance, excellent input and output return loss, and low noise figure. The device can be easily High Gain matched to obtain optimum power and linearity. Good gain flatness MGA-31189 is externally tunable to operate within 50MHz Low noise figure to 2GHz frequency range applications. With high IP3, low Excellent uniformity in product specification noise figure and wideband operation, the MGA-31189 can SOT-89 standard package be utilized as a driver amplifier in the transmit chain and as a second stage LNA in the receive chain. Specifications This device uses Avago Technologies proprietary 0.25um At 0.9GHz, Vdd = 5V, Idd = 111mA (typ) 25C GaAs Enhancement mode PHEMT process. OIP3 = 42dBm Pin connections and Package Marking Noise Figure = 2.0dB Gain = 21dB Gain Flatness (+/-50MHz) = 0.1dB P1dB = 24 dBm 11X IRL = 15.6dB, ORL = 12.8dB Note: 1. The MGA-31189 has a superior LFOM of 14.5dB. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power. 3 2 1 1 2 3 RFout GND RFin RFin GND RFout Vdd Top View Bottom View C Notes: Top View : Package marking provides orientation and identification 11 = Device Code C X = Date Code character identifies month of manufacturing Attention: Observe precautions for L handling electrostatic sensitive devices. RFout RFin ESD Machine Model = 100 V ESD Human Body Model = 400 V C C Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Figure 1. Simplified Schematic diagram 1 MGA-31189 Absolute Maximum Rating T =25C Thermal Resistance A 3 Thermal Resistance Symbol Parameter Units Absolute Maximum (V = 5.0V, T = 85C) = 54.5C/W d c jc I Drain Current mA 150 d,max Notes: 1. Operation of this device in excess of any of V Device Voltage V 5.5 d,max these limits may cause permanent damage. 2 P Power Dissipation mW 825 d 2. Board temperature (T ) is 25C, for T > 105C c c derate the device power at 18.3mW/C rise P CW RF Input Power dBm 25 in,max in board temperature adjacent to package bottom. T Junction Temperature C 150 j,max 3. Thermal resistance measured using Infrared measurement technique. T Storage Temperature C -65 to 150 stg 1 MGA-31189 Electrical Specifications T = 25C, V = 5V, unless noted A d Symbol Parameter and Test Condition Frequency Units Min. Typ. Max. I Quiescent current N/A mA 93 111 128 ds NF Noise Figure 0.45GHz 2.7 0.9GHz dB 2.0 2.6 1.5GHz 1.8 Gain Gain 0.45GHz 21 0.9GHz dB 19 21 23 1.5GHz 20 2 OIP3 Output Third Order Intercept Point 0.45GHz 41.5 0.9GHz dBm 39.2 42 1.5GHz 41.3 P1dB Output Power at 1dB Gain Compression 0.45GHz 23.7 0.9GHz dBm 22.3 24 1.5GHz 24.4 PAE Power Added Efficiency at P1dB 0.45GHz 42.7 0.9GHz % 42.5 1.5GHz 44.3 IRL Input Return Loss 0.45GHz 22.9 0.9GHz dB 15.6 1.5GHz 15.9 ORL Output Return Loss 0.45GHz 10 0.9GHz dB 12.8 1.5GHz 16 ISOL Isolation 0.45GHz 27.9 0.9GHz dB 27.6 1.5GHz 27.5 Notes: 1. Typical performance obtained from a test circuit described in Figure 34. 2. OIP3 test condition: F1 - F2 = 10MHz, with input power of -12dBm per tone measured at worst case side band. 2