MGA-425P8 GaAsEnchancement-modePHEMT 2 PowerAmplifierin2x2mm LPCCP ackage Data Sheet Description Features Near 50 broadband output match Avago Technologiess MGA-425P8 power ampliefi r is designed for wireless application in the 210 GHz frequency range. The Single +3.3V supply PA has a high power efficiency (PAE) achieved through the High Gain & OIP3 use of Avago Technologiess proprietary GaAs Enhancement- mode pHEMT process. Miniature 2 x 2 x 0.75 mm LPCC package MGA-425P8 is housed in a miniature 2.0 x 2.0 x 0.75 mm 8-lead leadless-plastic-chip-carrier (LPCC) package. The compact foot- Pb-free & MSL-1 package print, low prolfi e couple with the excellent thermal ecffi iency Tape-and-Reel packaging of the LPCC package makes the MGA-425P8 an ideal choice as option available power ampliefi r that saves board space. Specifications 5.25 GHz, 3.3V, 58 mA (typ) On-chip bias circuitry allows operation from a single +3.3V 13.3 dBm Linear Pout 5% EVM power supply. The output of the amplifier is near to 50 (be - low 2:1 VSWR) around 4.95.8 GHz. This makes MGA-425P8 an 10.3% PAE +13.3 dBm Pout ideal choice as power amplifier for broadband IEEE 802.11a 12 dBm Linear Pout 3% EVM system as well as other high performance wireless application in the 210 GHz frequency range. 7.6% PAE + 12 dBm Pout 47% PAE P1dB One external resistor (RBias) is used to set the bias current of the device over a wide range. 20.3 dBm P1dB This allows the designer to use the same part in several circuit 32.9 dBm OIP3 positions and tailor the output power/linearity performance, 16 dB Gain and current consumption, to suit each position. 1.7 dB NF Pin Connections and Package Marking 2.0 x 2.0 x 0.75 mm 8-lead LPCC Attention: Observe precautions for Pin 1 (NC) Pin 8 (NC) handling electrostatic sensitive devices. Pin 2 (RFin) Pin 7 (RFout, VD) ESD Machine Model (Class A) 2YX ESD Human Body Model (Class 1A) Pin 3 (NC) Pin 6 (NC) Refer to Avago Application Note A004R: Pin 4 (NC) Pin 5 (RBias) Electrostatic Discharge Damage and Control. Top View Note: Simplified Schematic Package marking provides orientation and identification 2Y = Device Code Vd X = Data code indicates the month of manufacture. Id=Ids + Ibias Ibias Ids Pin 1 (NC) Pin 8 (NC) Rbias Pin 2 (RFin) Pin 7 (RFout, VD) Vbias GND 5 7 Pin 3 (NC) Pin 6 (NC) RFout, VD 2 RFin Pin 4 (NC) Pin 5 (RBias) Bias Bottom View Note: 1, 3, 4, 6, 8 Use Die Attach Padded for electrical grounding and thermal dissipa- (NC) tionStdev = 0.28 Stdev = 1.22 Stdev = 0.9 +3 Std -3 Std -3 Std +3 Std -3 Std Stdev = 3 Stdev = 0.46 -3 Std -3 Std 1 MGA-425P8 Absolute Maximum Ratings Notes: Absolute 1. Operation of this device above any Symbol Parameter Units Maximum one of these parameters may cause per- 2 V Drain Supply Voltage V 5 manent damage. DS 2 2. Assuming DC quiescent conditions. I Drain Current A 100 DS 3. Board (package belly) temperature T is 3 B P Total Power Dissipation W 0.5 diss 25C. Derate 29 mW/C for T > 133 C. B P max. RF Input Power dBm 13 4. Channel-to-board thermal resistance mea- in sured using 150C Liquid Crystal Measure- T Channel Temperature C 150 CH ment method. T Storage Temperature C -65 to 150 STG 4 Thermal Resistance C/W 34.2 ch b 5, 6 Product Consistency Distribution Charts at 5.25 GHz, 3.3V RBias = 680 150 180 250 150 120 200 120 90 150 90 60 100 60 30 50 30 0 0 0 33 14.8 15.8 16.3 16.8 17.3 29 31 35 37 15.3 51 53 55 57 59 61 63 65 OIP3 (dBm) GAIN (dB) IDS (mA) Figure 1. OIP3 Figure 2. GAIN Figure 3. IDS LSL = 29 dBm, Nominal = 32.9 dBm. LSL = 14.5 dB, Nominal = 16 dB, USL= 17.5 dB. LSL = 51 mA, Nominal = 58 mA, USL = 65 mA. 240 180 Notes: 5. Distribution data sample size is 500 200 150 samples taken from 3 different wafers and 3 different lots. Future wafers allocated 160 120 to this product may have nominal values anywhere between the upper and lower 120 90 limits. 6. Measurements are made on production 80 60 test board, which represents a trade-off between optimal OIP3, P1dB, Gain and 40 30 VSWR. Circuit losses have been de-embed- ded from actual measurements. 0 0 20.3 44 18.3 19.3 21.3 22.3 34 39 49 54 59 P1dB (dBm) PAE (%) Figure 4. P1dB Figure 5. PAE LSL = 18.25 dBm, Nominal = 20.3 dBm. LSL = 33.5 %, Nominal = 47 %. 2