86x MGA-86563 0.5 6 GHz Low Noise GaAs MMIC Amplifier Data Sheet Description Features Avagos MGA-86563 is an economical, easy-to-use GaAs Lead-free Option Available MMIC amplifier that offers low noise figure and excel- Ultra-Miniature Package lent gain for applications from 0.5 to 6 GHz. Packaged in Internally Biased, Single +5 V Supply (14 mA) an ultra-miniature SOT-363 package, it requires half the board space of the SOT-143. 1.6 dB Noise Figure at 2.4 GHz 21.8 dB Gain at 2.4 GHz The MGA-86563 may be used without impedance match- ing as a high performance 2 dB NF gain block. Alterna- +3.1 dBm P at 2.4 GHz 1dB tively, with the addition of a simple shunt-series inductor Applications at the input, the device noise figure can be reduced to 1.6dB at 2.4 GHz. For 1.5 GHz applications and above, LNA or Gain Stage for ISM, PCS, MMDS, GPS, TVRO, and the output is well matched to 50 . Below 1.5 GHz, gain Other C band Applications can be increased by using conjugate matching. The circuit uses state-of-the-art PHEMT technology with self-biasing current sources, a source-follower interstage, Equivalent Circuit resistive feedback, and on-chip impedance matching networks. A patented, on-chip active bias circuit allows RF operation from a single +5 V power supply. Current NPUT 4 consump tion is only 14 mA, making this part suitable for 1 RF OUTPUT battery powered applications. AND V d Surface Mount Package SOT-363 (SC-70) GROUND 2, 3, 5, 6 Pin Connections and Package Marking Attention: Observe precautions for handling electrostatic sensitive devices. INPUT 1 6 GND ESD Human Body Model (Class 0) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. GND 2 5 GND OUTPUT GND 3 4 and V d Note: Package marking provides orientation and identification.86 = Device Code = Date code character identifies month of manufactureMGA-86563 Absolute Maximum Ratings 2 Thermal Resistance : = 160C/W Absolute ch-c 1 Symbol Parameter Units Maximum Notes: 1. Operation of this device above any one of V Device Voltage, RF V 9 d these limits may cause permanent damage. Output to Ground 2. T = 25C (T is defined to be the tempera- C C V RF Input Voltage to V +0.5 in ture at the package pins where contact is Ground 1.0 made to the circuit board). P CW RF Input Power dBm +13 in T Channel Temperature C 150 ch T Storage Temperature C -65 to 150 STG Electrical Specifications, T = 25C, Z = 50 unless noted, V = 5 V C O d Symbol Parameters and Test Conditions Units Min. Typ. Max. 1 G Gain in Test Circuit f = 2.0 GHz 17 20 test 1 NF Noise Figure in Test Circuit f = 2.0 GHz 1.8 2.3 test NF Optimum Noise Figure f = 0.9 GHz dB 2.0 O (Tuned for lowest noise figure) f = 2.0 GHz 1.5 f = 2.4 GHz 1.6 f = 4.0 GHz 1.7 f = 6.0 GHz 2.0 G Associated Gain at NF f = 0.9 GHz dB 20.8 A O (Tuned for lowest noise figure) f = 2.0 GHz 22.7 f = 2.4 GHz 22.5 f = 4.0 GHz 18.0 f = 6.0 GHz 13.7 P Output Power at 1 dB Gain Compression f = 0.9 GHz dBm 3.6 1 dB (50 Performance) f = 2.0 GHz 4.1 f = 2.4 GHz 4.2 f = 4.0 GHz 4.3 f = 6.0 GHz 3.3 IP Third Order Intercept Point f = 2.4 GHz dBm +15 3 VSWR Input VSWR f = 2.4 GHz 2.3:1 in VSWR Output VSWR f = 2.4 GHz 1.7:1 out I Device Current mA 14 d Note: 1. Guaranteed specifications are 100% tested in the circuit in Figure 10 in the Applications Information section. 2