NPN SILICON RF TRANSISTOR JEITA Part No. NE85639 / 2SC4093 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD DESCRIPTION The NE85639 / 2SC4093 is a NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristics, and is contained in a 4-pin minimold package which enables high-isolation gain. FEATURES Low Noise NF = 1.1 dB TYP. VCE = 10 V, IC = 7 mA, f = 1 GHz High Power gain 2 S21e = 13 dB TYP. VCE = 10 V, IC = 20 mA, f = 1 GHz Maximum available power gain: MAG = 14.2 dB TYP. VCE = 10 V, IC = 20 mA, f = 1 GHz 4-pin minimold Package ORDERING INFORMATION Part Number Quantity Supplying Form NE85639-A 50 pcs (Non reel) 8 mm wide embossed taping 2SC4093-A Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape NE85639-T1-A 3 kpcs/reel 2SC4093-T1-A Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Note Free air Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10519EJ01V0DS (1st edition) The mark shows major revised points. (Previous No. P10365EJ3V1DS00) Date Published October 2004 CP(K) PHASE-OUTNE85639 / 2SC4093 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 10 V, IE = 0 mA 1.0 A Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA 1.0 A Note 1 DC Current Gain hFE VCE = 10 V, IC = 20 mA 50 120 250 RF Characteristics Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA 7.0 GHz 2 Insertion Power Gain S21e VCE = 10 V, IC = 20 mA, f = 1.0 GHz 11 13 dB Noise Figure NF VCE = 10 V, IC = 7 mA, f = 1.0 GHz 1.1 2.0 dB Note 2 Reverse Transfer Capacitance Cre VCB = 10 V, IE = 0 mA, f = 1.0 MHz 0.6 0.95 pF Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Note Note Note Rank R26/RBF R27/RBG R28/RBH Marking R26 R27 R28 Range 50 to 100 80 to 160 125 to 250 Note Old Specification / New Specification 2 Data Sheet PU10519EJ01V0DS PHASE-OUT