X-On Electronics has gained recognition as a prominent supplier of 2SC4536-T1-AZ RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. 2SC4536-T1-AZ RF Bipolar Transistors are a product manufactured by CEL. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

2SC4536-T1-AZ CEL

2SC4536-T1-AZ electronic component of CEL
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Part No.2SC4536-T1-AZ
Manufacturer: CEL
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN Med Pwr Hi-Freq
Datasheet: 2SC4536-T1-AZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the 2SC4536-T1-AZ from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC4536-T1-AZ and other electronic components in the RF Bipolar Transistors category and beyond.

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NE46100 / NE46134 NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46134 FEATURES TYPICAL OUTPUT POWER vs. INPUT POWER HIGH DYNAMIC RANGE f = 1.0 GHz, IC = 100 mA LOW IM DISTORTION: -40 dBc 30.0 12.5 V HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 10 V LOW NOISE: 1.5 dB TYP at 500 MHz 26.0 5 V LOW COST 24.0 22.0 20.0 DESCRIPTION 18.0 16.0 The NE461 series of NPN silicon epitaxial bipolar transis- tors is designed for medium power applications requiring high 14.0 dynamic range. This device exhibits an outstanding combina- 12.0 tion of high gain and low intermodulation distortion, as well as 5 10 15 20 25 low noise figure. The NE461 series offers excellent perfor- Input Power, PIN (dBm) mance and reliability at low cost through titanium, platinum, gold metallization system and direct nitride passiva- tion of the surface of the chip. Devices are available in a low cost surface mount package (SOT-89) as well as in chip form. ELECTRICAL CHARACTERISTICS (TA = 25 C) PART NUMBER NE46100 NE46134 1 EIAJ REGISTERED NUMBER 2SC4536 PACKAGE OUTLINE 00 (CHIP) 34 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 10 V, IC = 100 mA GHz 5.5 5.5 3 NFMIN Minimum Noise Figure at VCE = 10 V, IC = 50 mA, 500 MHz dB 1.5 1.5 VCE = 10 V, IC = 50 mA, 1 GHz dB 2.0 2.0 GL Linear Gain, VCE = 12.5 V, IC = 100 mA, 2.0 GHz dB 9.0 VCE = 12.5 V, IC = 100 mA, 1.0 GHz dB 8.0 2 S21E Insertion Power Gain at 10 V, 50 mA, f = 1.0 GHz dB 10.0 5.5 7.0 2 hFE DC Current Gain at VCE = 10 V, IC = 50 mA 40 200 40 200 ICBO Collector Cutoff Current at VCB = 20 V, IE = 0 mA . A 5.0 5.0 IEBO Emitter Cutoff Current at VEB = 2 V, IC = 0 mA A 5.0 5.0 P1dB Output Power at 1 dB Compression, VCE = 12.5 V, IC = 100 mA, 2.0 GHz dBm 27.0 VCE = 12.5 V, IC = 100 mA, 1.0 GHz dBm 27.5 IM3 Intermodulation Distortion, 10 V, 100 mA, F1 = 1.0 GHz, F2 = 0.99 GHz, Total POUT = 20 dBm dBc -40.0 -40.0 RTH (J-C) Thermal Resistance (Junction to Case) C/W 30 32.5 RTH (J-A) Thermal Resistance (Junction to Ambient) C/W 312.5 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed: PW 350 ms, Duty Cycle 2% 3. RS = RL = 50 untuned DISCONTINUED Output Power, POUT (dBm)NE46100, NE46134 1 ABSOLUTE MAXIMUM RATINGS (TA = 25C) NE46134 SYMBOLS PARAMETERS UNITS RATINGS TYPICAL NOISE PARAMETERS (TA = 25C) VCBO Collector to Base Voltage V 30 FREQ. NFOPT GA OPT VCEO Collector to Emitter Voltage V 15 (GHz) (dB) (dB) MAG ANG RN/50 VCC = 10 V, IC = 50 mA VEBO Emitter to Base Voltage V 3 0.5 1.5 13.5 0.34 -176 0.09 IC Collector Current mA 250 PT Total Power Dissipation 2 NE46100 W 3.75 3 NE46134 W 2.0 TJ Junction Temperature NE46100 C 200 NE46134 C 150 TSTG Storage Temperature NE46100 C -65 to +200 NE46134 C -65 to +150 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Chip mounted on an infinite heat sink (see AN-1001 for handling instructions). 2 3. Packaged device mounted on 0.7 mm x 2.5 cm double sided ceramic substrate (copper plating). TYPICAL PERFORMANCE CURVES (TA=25C) NE46134 NE46100, NE46134 INSERTION POWER GAIN AND MAXIMUM TOTAL POWER DISSIPATION AVAILABLE GAIN vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE VCE = 10 V, f = 1 GHz 4.0 NE46100 10 3.75 MAG RTH (J-C) 30C/W WITH INFINITE 8 HEAT SINK 3.0 NE46134 RTH (J-C) 32.5C/W 2 S21E WITH INFINITE 6 HEAT SINK 2.0 4 NE46134 RTH (J-A) 1.0 312.5C/W WITH INFINITE 2 HEAT SINK 0.4 0 0 0 50 100 150 200 0 50 100 300 85 87.5 Collector Current, Ic (mA) Ambient Temperature, TA (C) NE46100, NE46134 NE46100, NE46134 COLLLECTOR CURRENT vs. NOISE FIGURE vs. COLLECTOR CURRENT COLLECTOR TO EMITTER VOLTAGE CE = 10 V, f = 1 GHz V 5 IB = 0.6 mA 0.5 mA 100 0.4 mA 4 80 0.3 mA 3 60 0.2 mA 2 40 0.1 mA 1 20 0 0 0 10 20 5 10 100 200 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) RS = RL = 50 Untuned DISCONTINUED 2 Insertion Power Gain, S21E (dB) Maximum Available Gain, MAG (dB) Collector Current, IC (mA) Noise Figure,NF(dB) Total Power Dissipation, PT (W)

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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