NE46100 / NE46134 NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46134 FEATURES TYPICAL OUTPUT POWER vs. INPUT POWER HIGH DYNAMIC RANGE f = 1.0 GHz, IC = 100 mA LOW IM DISTORTION: -40 dBc 30.0 12.5 V HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 10 V LOW NOISE: 1.5 dB TYP at 500 MHz 26.0 5 V LOW COST 24.0 22.0 20.0 DESCRIPTION 18.0 16.0 The NE461 series of NPN silicon epitaxial bipolar transis- tors is designed for medium power applications requiring high 14.0 dynamic range. This device exhibits an outstanding combina- 12.0 tion of high gain and low intermodulation distortion, as well as 5 10 15 20 25 low noise figure. The NE461 series offers excellent perfor- Input Power, PIN (dBm) mance and reliability at low cost through titanium, platinum, gold metallization system and direct nitride passiva- tion of the surface of the chip. Devices are available in a low cost surface mount package (SOT-89) as well as in chip form. ELECTRICAL CHARACTERISTICS (TA = 25 C) PART NUMBER NE46100 NE46134 1 EIAJ REGISTERED NUMBER 2SC4536 PACKAGE OUTLINE 00 (CHIP) 34 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 10 V, IC = 100 mA GHz 5.5 5.5 3 NFMIN Minimum Noise Figure at VCE = 10 V, IC = 50 mA, 500 MHz dB 1.5 1.5 VCE = 10 V, IC = 50 mA, 1 GHz dB 2.0 2.0 GL Linear Gain, VCE = 12.5 V, IC = 100 mA, 2.0 GHz dB 9.0 VCE = 12.5 V, IC = 100 mA, 1.0 GHz dB 8.0 2 S21E Insertion Power Gain at 10 V, 50 mA, f = 1.0 GHz dB 10.0 5.5 7.0 2 hFE DC Current Gain at VCE = 10 V, IC = 50 mA 40 200 40 200 ICBO Collector Cutoff Current at VCB = 20 V, IE = 0 mA . A 5.0 5.0 IEBO Emitter Cutoff Current at VEB = 2 V, IC = 0 mA A 5.0 5.0 P1dB Output Power at 1 dB Compression, VCE = 12.5 V, IC = 100 mA, 2.0 GHz dBm 27.0 VCE = 12.5 V, IC = 100 mA, 1.0 GHz dBm 27.5 IM3 Intermodulation Distortion, 10 V, 100 mA, F1 = 1.0 GHz, F2 = 0.99 GHz, Total POUT = 20 dBm dBc -40.0 -40.0 RTH (J-C) Thermal Resistance (Junction to Case) C/W 30 32.5 RTH (J-A) Thermal Resistance (Junction to Ambient) C/W 312.5 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed: PW 350 ms, Duty Cycle 2% 3. RS = RL = 50 untuned DISCONTINUED Output Power, POUT (dBm)NE46100, NE46134 1 ABSOLUTE MAXIMUM RATINGS (TA = 25C) NE46134 SYMBOLS PARAMETERS UNITS RATINGS TYPICAL NOISE PARAMETERS (TA = 25C) VCBO Collector to Base Voltage V 30 FREQ. NFOPT GA OPT VCEO Collector to Emitter Voltage V 15 (GHz) (dB) (dB) MAG ANG RN/50 VCC = 10 V, IC = 50 mA VEBO Emitter to Base Voltage V 3 0.5 1.5 13.5 0.34 -176 0.09 IC Collector Current mA 250 PT Total Power Dissipation 2 NE46100 W 3.75 3 NE46134 W 2.0 TJ Junction Temperature NE46100 C 200 NE46134 C 150 TSTG Storage Temperature NE46100 C -65 to +200 NE46134 C -65 to +150 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Chip mounted on an infinite heat sink (see AN-1001 for handling instructions). 2 3. Packaged device mounted on 0.7 mm x 2.5 cm double sided ceramic substrate (copper plating). TYPICAL PERFORMANCE CURVES (TA=25C) NE46134 NE46100, NE46134 INSERTION POWER GAIN AND MAXIMUM TOTAL POWER DISSIPATION AVAILABLE GAIN vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE VCE = 10 V, f = 1 GHz 4.0 NE46100 10 3.75 MAG RTH (J-C) 30C/W WITH INFINITE 8 HEAT SINK 3.0 NE46134 RTH (J-C) 32.5C/W 2 S21E WITH INFINITE 6 HEAT SINK 2.0 4 NE46134 RTH (J-A) 1.0 312.5C/W WITH INFINITE 2 HEAT SINK 0.4 0 0 0 50 100 150 200 0 50 100 300 85 87.5 Collector Current, Ic (mA) Ambient Temperature, TA (C) NE46100, NE46134 NE46100, NE46134 COLLLECTOR CURRENT vs. NOISE FIGURE vs. COLLECTOR CURRENT COLLECTOR TO EMITTER VOLTAGE CE = 10 V, f = 1 GHz V 5 IB = 0.6 mA 0.5 mA 100 0.4 mA 4 80 0.3 mA 3 60 0.2 mA 2 40 0.1 mA 1 20 0 0 0 10 20 5 10 100 200 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) RS = RL = 50 Untuned DISCONTINUED 2 Insertion Power Gain, S21E (dB) Maximum Available Gain, MAG (dB) Collector Current, IC (mA) Noise Figure,NF(dB) Total Power Dissipation, PT (W)