X-On Electronics has gained recognition as a prominent supplier of NE58219-T1-A RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. NE58219-T1-A RF Bipolar Transistors are a product manufactured by CEL. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

NE58219-T1-A CEL

NE58219-T1-A electronic component of CEL
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Part No.NE58219-T1-A
Manufacturer: CEL
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN UHF Mixer/Osc
Datasheet: NE58219-T1-A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1992 ea
Line Total: USD 597.6 
Availability - 0
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 30 Aug to Thu. 05 Sep
MOQ : 1
Multiples : 1
1 : USD 0

0
Ship by Fri. 30 Aug to Thu. 05 Sep

Multiples : 1

0
Ship by Fri. 30 Aug to Thu. 05 Sep
MOQ : 3000
Multiples : 1
3000 : USD 0.1992
3000 : USD 0.1943
3000 : USD 0.1883
6000 : USD 0.181
18000 : USD 0.181
33000 : USD 0.181

   
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RoHS - XON
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We are delighted to provide the NE58219-T1-A from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NE58219-T1-A and other electronic components in the RF Bipolar Transistors category and beyond.

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SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the 1. 6 0.1 0. 8 0.1 transistor has been applied ultra super mini mold package. 2 FEATURES High fT : 5.0 GHz TYP. ( VCE = 5 V, IC = 5 mA, f = 1 GHz) 3 Low Cre : 0.9 pF TYP. ( VCB = 5 V, IE = 0, f = 1 MHz) 1 Ultra Super Mini Mold Package. (1.6 mm 0.8 mm) ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE NE58219-A Embossed tape 8 mm wide. 50 pcs./unit 2SC5004-A Pin 3 (Collector) face to NE58219-T1-A perforation side of the tape. 3 kpcs./Reel 2SC5004-T1-A * Please contact your nearby sales office if you require evaluation PIN CONNECTIONS sample. Unit sample quantity shall be 50 pcs. 1. Emitter 2. Base 3. Collector ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3 V Collector Current IC 60 mA Total Power Dissipation PT 100 mW Junction Temperature Tj 125 C Storage Temperature Tstg 55 to +125 C Document No. P10383EJ2V0DS00 (2nd edition) (Previous No. TD-2428) Date Published July 1995 P 1. 6 0.1 0.7 5 0.05 1.0 0.5 0.5 0.6 +0.1 0.2 0 0 to 0.1 +0.1 +0.1 0.15 0.3 0.05 0NE58219 / 2SC5004 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Collector Cutoff Current ICBO 0.1 A VCB = 15 V, IE = 0 Emitter Cutoff Current IEBO 0.1 A VEB = 1 V, IC = 0 Collector Saturation Voltage VCE (sat) 0.5 V hFE = 10, IC = 5 mA *1 DC Current Gain hFE 60 120 VCE = 5 V, IC = 5 mA Gain Bandwidth Product fT 3.0 5.0 GHz VCE = 5 V, IC = 5 mA *2 Feedback Capacitance Cre 0.9 1.2 pF VCB = 5 V, IE = 0, f = 1 MHz 2 Insertion Power Gain S21e 5.0 dB VCE = 5 V, IC = 5 mA, f = 1 GHz *1 Pulse Measurement PW 350 s, Duty Cycle 2 % *2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. hFE Classification Rank FB Marking 77 hFE 60 to 120 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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