NPN SILICON RF TRANSISTOR JEITA Part No. NE678M04 / 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 18.0 dBm TYP. VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes Flat-lead 4-pin thin-type super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form NE678M04-A 50 pcs (Non reel) 8 mm wide embossed taping 2SC5753-A NE678M04-T2-A 3 kpcs/reel Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape 2SC5753-T2-A Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9.0 V Collector to Emitter Voltage VCEO 6.0 V Emitter to Base Voltage VEBO 2.0 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 205 mW Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C 2 Note Mounted on 1.08 cm 1.0 mm (t) glass epoxy PCB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. P15659EJ1V0DS00 (1st edition) Date Published August 2001 NS CP(K) PHASE-OUTNE678M04 / 2SC5753 THERMAL RESISTANCE Parameter Symbol Value Unit Junction to Ambient Resistance Rth j-a 600 C/W Note 2 Note Mounted on 1.08 cm 1.0 mm (t) glass epoxy PCB ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA 100 nA Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 mA 100 nA Note 1 DC Current Gain hFE VCE = 3 V, IC = 30 mA 75 120 150 RF Characteristics Gain Bandwidth Product fT VCE = 3 V, IC = 30 mA, f = 2 GHz 12.0 GHz 2 Insertion Power Gain S21e VCE = 3 V, IC = 30 mA, f = 2 GHz 8.0 10.5 dB VCE = 3 V, IC = 7 mA, f = 2 GHz, Noise Figure NF 1.7 2.5 dB ZS = Zopt Note 2 Reverse Transfer Capacitance Cre VCB = 3 V, IE = 0 mA, f = 1 MHz 0.42 0.7 pF Note 3 Maximum Available Power Gain MAG VCE = 3 V, IC = 30 mA, f = 2 GHz 13.5 dB VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz, Linear Gain GL 13.0 dB Pin = 5 dBm VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz, Gain 1 dB Compression Output Power PO (1 dB) 18.0 dBm Pin = 7 dBm VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz, Collector Efficiency C 55 % Pin = 7 dBm Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded S21 2 3. MAG = (K (K 1) ) S12 hFE CLASSIFICATION Rank FB Marking R55 hFE Value 75 to 150 2 Data Sheet P15659EJ1V0DS PHASE-OUT