DATA SHEET DATA SHEET SILICON TRANSISTOR JEITA Part No. NE6803 3 / 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION PACKAGE DIMENSIONS The NE68033 / 2SC3585 is an NPN epitaxial silicon transistor designed (Units: mm) for use in low-noise and small signal amplifiers from VHF band to UHF band. The NE68033 / 2SC3585 features excellent power gain with very 2.80.2 low-noise figures. The NE68033 / 2SC3585 employs direct nitride +0.1 - 1.5 0.65 -0.15 passivated base surface process (DNP process) which is a proprietary new fabrication technique which provides excellent noise figures at high current values. This allows excellent associated gain and very wide dynamic range. 2 FEATURES 3 1 NF 1.8 dB TYP. f = 2.0 GHz - Ga 9 dB TYP. f = 2.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Marking Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V - Emitter to Base Voltage VEBO 1.5 V Collector Current IC 35 mA Total Power Dissipation PT 200 mW PIN CONNECTIONS Junction Temperature Tj 150 C 1. Emitter Storage Temperature Tstg 65 to +150 C 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 AVCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 AVEB = 1 V, IC = 0 DC Current Gain hFE * 50 100 250 VCE = 6 V, IC = 10 mA Gain Bandwidth Product fT 10 GHz VCE = 6 V, IC = 10 mA Feed-Back Capacitance Cre ** 0.3 0.8 pF VCB = 10 V, IE = 0, f = 1.0 MHz 2 Insertion Power Gain S21e 6.0 8.0 dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz Maximum Available Gain MAG 10 dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz Noise Figure NF 1.8 3.0 dB VCE = 6 V, IC = 5 mA, f = 2.0 GHz * Pulse Measurement PW 350 s, Duty Cycle 2 % ** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge. hFE Classification Class R43/Q * R44/R * R45/S * Marking R43 R44 R45 hFE 50 to 100 80 to 160 125 to 250 * Old Specification / New Specification Document No. P10361EJ4V1DS00 (4th edition) Date Published March 1997 N DISCONTINUED 1.1 to 1.4 2.90.2 0.3 0.95 0.95 +0.1 0.4 0.05 0 to 0.1 +0.1 +0.1 0.16 0.4 0.06 0.05NE68033 / 2SC3585 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. FEED-BACK CAPACITANCE vs. AMBIENT TEMPERATURE COLLECTOR TO BASE VOLTAGE 3 f = 1.0 MHz Free Air 2 200 1 0.7 100 0.5 0.3 0.2 0 50 100 150 TA-Ambient Temperature-C 0.1 1 2 3 5 7 10 20 30 VCB-Collector to Base Voltage-V DC CURRENT GAIN vs. INSERTION GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT 200 10 VCE = 6 V VCE = 6 V f = 2.0 GHz 8 100 6 50 4 20 2 10 0.5 1 5 10 50 0 1 2 3 5 7 10 20 30 IC-Collector Current-mA IC-Collector Current-mA GAIN BANDWIDTH PRODUCT vs. INSERTION GAIN, MAXIMUM AVAILABLE COLLECTOR CURRENT GAIN vs. FREQUENCY 30 20 VCE = 6 V VCE = 6 V 20 IC = 10 mA 16 MAG 2 10 S21e 12 7 5 8 3 2 4 0 1 2 3 5 7 10 20 30 0.1 0.2 0.3 0.5 7.0 1.0 2.0 3.0 IC-Collector Current-mA f-Frequency-GHz 2 DISCONTINUED fT-Gain Bandwidth Product-MHz hFE-DC Current Gain PT-Total Power Dissipation-W MAG-Maximum Available Gain-dB 2 2 S21e -Insertion Gain -dB S21e -Insertion Gain-dB Cre-Feed-back Capacitance-pF