X-On Electronics has gained recognition as a prominent supplier of NE68518-T1-A RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. NE68518-T1-A RF Bipolar Transistors are a product manufactured by CEL. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

NE68518-T1-A CEL

NE68518-T1-A electronic component of CEL
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Part No.NE68518-T1-A
Manufacturer: CEL
Category: RF Bipolar Transistors
Description: Trans RF BJT NPN 6V 0.03A 4-Pin(3+Tab) SOT-343 T/R
Datasheet: NE68518-T1-A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 1.5446 ea
Line Total: USD 4633.8 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 1.5446
6000 : USD 1.3912

   
Manufacturer
Product Category
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Packaging
Collector Current Dc Max
Collector- Base Voltage Vcbo
Frequency Max
Mounting
Operating Temp Range
Pin Count
Number Of Elements
Dc Current Gain Min
Operating Temperature Classification
Category
Rad Hardened
Package Type
Deleted
Dc Current Gain
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We are delighted to provide the NE68518-T1-A from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NE68518-T1-A and other electronic components in the RF Bipolar Transistors category and beyond.

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DATA SHEET NPN SILICON RF TRANSISTOR JEITA Part No. NE68518 / 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18) FEATURES High fT: fT = 12 GHz TYP. VCE = 3 V, IC = 10 mA, f = 2 GHz Low noise and high gain Low voltage operation 4-pin super minimold (18) package ORDERING INFORMATION Part Number Quantity Supplying Form NE68518-A 50 pcs (Non reel) 8 mm wide embossed taping 2SC5015-A Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape NE68518-T1-A 3 kpcs/reel 2SC5015-T1-A Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9 V Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage VEBO 2 V Collector Current IC 30 mA Total Power Dissipation Ptot 150 mW Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PU10403EJ01V0DS (1st edition) The mark shows major revised points. (Previous No. P10394EJ2V0DS00) Date Published June 2003 CP(K) DISCONTINUEDNE68518 / 2SC5015 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA 0.1 A Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA 0.1 A Note 1 DC Current Gain hFE VCE = 3 V, IC = 10 mA 75 150 RF Characteristics Gain Bandwidth Product fT VCE = 3 V, IC = 10 mA, f = 2 GHz 12 GHz 2 Insertion Power Gain S21e VCE = 3 V, IC = 10 mA, f = 2 GHz 9 11 dB Noise Figure NF VCE = 3 V, IC = 3 mA, f = 2 GHz 1.5 2.5 dB Note 2 Reverse Transfer Capacitance Cre VCB = 3 V, IE = 0 mA, f = 1 MHz 0.3 0.5 pF Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank KB Marking T83 hFE Value 75 to 150 2 Data Sheet PU10403EJ01V0DS DISCONTINUED

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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