DATA SHEET NPN SILICON RF TRANSISTOR JEITA Part No. NE856M02 / 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES 2 High gain: S21e = 12 dB TYP. VCE = 10 V, IC = 20 mA, f = 1 GHz 4-pin power minimold package with improved gain from the NE85634 / 2SC3357 ORDERING INFORMATION Part Number Quantity Supplying Form NE856M02-AZ 25 pcs (Non reel) Magazine case 2SC5336-AZ 12 mm wide embossed taping NE856M02-AZ 1 kpcs/reel Collector face the perforation side of the tape 2SC5336-T1-AZ Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit CBO Collector to Base Voltage V 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 1.2 W Junction Temperature Tj 150 C Storage Temperature Tstg - 65 to +150 C 2 Note Mounted on 16 cm 0.7 mm (t) ceramic substrate (Copper plating) Because this product uses high-frequency technology, avoid excessive static electricity, etc. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. P10938EJ2V0DS00 (2nd edition) The mark shows major revised points. Date Published August 2001 NS CP(K) DISCONTINUEDNE856M02 / 2SC5336 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 10 V, IE = 0 mA 1.0 A Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 mA 1.0 A Note 1 DC Current Gain hFE VCE = 10 V, IC = 20 mA 50 120 250 RF Characteristics Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA 6.5 GHz 2 Insertion Power Gain S21e VCE = 10 V, IC = 20 mA, f = 1 GHz 12 dB Noise Figure (1) NF VCE = 10 V, IC = 7 mA, f = 1 GHz 1.1 dB Noise Figure (2) NF VCE = 10 V, IC = 40 mA, f = 1 GHz 1.8 3.0 dB Note 2 Reverse Transfer Capacitance Cre VCB = 10 V, IE = 0 mA, f = 1 MHz 0.5 0.8 pF Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank RH RF RE Marking RH RF RE hFE Value 50 to 100 80 to 160 125 to 250 2 Data Sheet P10938EJ2V0DS DISCONTINUED