A Business Partner of Renesas Electronics Corporation. Data Sheet NESG2101M05 R09DS0036EJ0300 NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Rev. 3.00 Flat-Lead 4-Pin Thin-Type Super Minimold (M05) Jun 20, 2012 FEATURES The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high- gain amplification P = 21 dBm TYP. V = 3.6 V, I = 10 mA, f = 2 GHz O (1 dB) CE Cq NF = 0.6 dB TYP., G = 19.0 dB TYP. V = 2 V, I = 7 mA, f = 1 GHz a CE C Maximum stable power gain: MSG = 17.0 dB TYP. V = 3 V, I = 50 mA, f = 2 GHz CE C High breakdown voltage technology for SiGe Tr. adopted: V (absolute maximum ratings) = 5.0 V CEO Flat-lead 4-pin thin-type super minimold (M05) package <R> ORDERING INFORMATION Part Number Order Number Package Quantity Supplying Form NESG2101M05 NESG2101M05-A Flat-lead 4-pin thin-type 50 pcs 8 mm wide embossed taping supper minimold (Non reel) Pin 3 (Collector), Pin 4 (M05, 2012 PKG) NESG2101M05-T1 NESG2101M05-T1-A 3 kpcs/reel (Emitter) face the perforation (Pb-Free) side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (T = +25C) A Parameter Symbol Ratings Unit Collector to Base Voltage V 13.0 V CBO Collector to Emitter Voltage V 5.0 V CEO Emitter to Base Voltage V 1.5 V EBO Collector Current I 100 mA C Note Total Power Dissipation P 500 mW tot Junction Temperature T 150 C j Storage Temperature T 65 to +150 C stg 2 Note: Mounted on 38 cm 0.4 mm (t) polyimide PCB CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an<R in the PDF file and specifying it in theFind what field. R09DS0036EJ0300 Rev. 3.00 Page 1 of 13 Jun 20, 2012 A Business Partner of Renesas Electronics Corporation. NESG2101M05 <R> ELECTRICAL CHARACTERISTICS (T = +25C) A Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current I V = 5 V, I = 0 100 nA CBO CB E Emitter Cut-off Current I V = 1 V, I = 0 100 nA EBO EB C Note 1 DC Current Gain h V = 2 V, I = 5 mA 130 190 260 FE CE C RF Characteristics Gain Bandwidth Product f V = 3 V, I = 50 mA, f = 2 GHz 14 17 GHz T CE C 2 Insertion Power Gain S V = 3 V, I = 50 mA, f = 2 GHz 11.5 13.5 dB 21e CE C Noise Figure (1) NF V = 2 V, I = 10 mA, f = 2 GHz, 0.9 1.2 dB CE C Z = Z , Z = Z S Sopt L Lopt Noise Figure (2) NF V = 2 V, I = 7 mA, f = 1 GHz, 0.6 dB CE C Z = Z , Z = Z S Sopt L Lopt Associated Gain (1) G V = 2 V, I = 10 mA, f = 2 GHz, 11.0 13.0 dB a CE C Z = Z , Z = Z S Sopt L Lopt Associated Gain (2) G V = 2 V, I = 7 mA, f = 1 GHz, 19.0 dB a CE C Z = Z t, Z = Z S Sop L Lopt Note 2 Reverse Transfer Capacitance C V = 2 V, I = 0, f = 1 MHz 0.4 0.5 pF re CB E Note 3 Maximum Stable Power Gain MSG V = 3 V, I = 50 mA, f = 2 GHz 14.5 17.0 dB CE C Gain 1 dB Compression Output P V = 3.6 V, I = 10 mA, f = 2 GHz 21 dBm O (1 dB) CE Cq Power Linear Gain G V = 3.6 V, I = 10 mA, f = 2 GHz 15 dB L CE Cq Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded S 21 3. MSG = S 12 h CLASSIFICATION FE Rank FB/YFB <R> Marking T1J h Value 130 to 260 FE R09DS0036EJ0300 Rev. 3.00 Page 2 of 13 Jun 20, 2012