2N2329 Central Semiconductor

TM 2N2322 2N2326 2N2323 2N2327 Central 2N2324 2N2328 Semiconductor Corp. 2N2325 2N2329 SILICON CONTROLLED RECTIFIER DESCRIPTION: 1.6 AMPS, 25 THRU 400 VOLTS The CENTRAL SEMICONDUCTOR 2N2322 Series types are hermetically sealed Silicon Controlled Rectifiers designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) 2N23 C SYMBOL 22 23 24 25 26 27 28 29 UNITS Peak Repetitive Forward Voltage V 25 50 100 150 200 250 300 400 V DRM Peak Repetitive Reverse Voltage V 25 50 100 150 200 250 300 400 V RRM Non-Repetitive Peak Reverse Voltage V 40 75 150 225 300 350 400 500 V RSM RMS On-State Current I 1.6 A T(RMS) Average On-State Current (T =85C) I 1.0 A C T(AV) Peak One Cycle Surge (t=8.3ms) I 15 A TSM Peak Gate Power P 0.10 W GM Average Gate Power P 0.01 W G(AV) Peak Gate Current I 0.10 A GM Peak Gate Voltage V 6.0 V GM Junction Temperature T -65 to +125 C J Storage Temperature T -65 to +150 C stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I , I Rated V , V , R =1.0k 5.0 A DRM RRM DRM RRM GK I V =6.0V, R =100 200 A GT D L I V =6.0V, R =1.0k 2.0 mA H D GK V V =6.0V, R =100 0.8 V GT D L V I =1.0A, tp=380s 1.5 V TM TM R0 (11-December 2008)TM 2N2322 2N2326 Central 2N2323 2N2327 2N2324 2N2328 Semiconductor Corp. 2N2325 2N2329 SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE 2) GATE 3) ANODE (case) MARKING: FULL PART NUMBER R0 (11-December 2008)