CMDSH-4E TR PBFREE Central Semiconductor

CMDSH-4E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT SILICON DESCRIPTION: SCHOTTKY DIODE The CENTRAL SEMICONDUCTOR CMDSH-4E is an enhanced version of the CMDSH-3 silicon Schottky diode in an SOD-323 surface mount package. ENHANCED SPECIFICATIONS: I from 100mA MAX to 200mA MAX O BV from 30V MIN to 40V MIN R V from 1.0V MAX to 0.8V MAX F SOD-323 CASE MARKING CODE: S1E MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Peak Repetitive Reverse Voltage V 40 V RRM Average Forward Current I 200 mA O Peak Repetitive Forward Current I 350 mA FRM Peak Forward Surge Current, tp=10ms I 750 mA FSM Power Dissipation P 250 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 500 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=25V 90 500 nA R R I V =25V, T=100C 25 100 A R R A BV I =100A 40 50 V R R V I=2.0mA 0.29 0.33 V F F V I=15mA 0.37 0.42 V F F V I=100mA 0.51 0.80 V F F V I=200mA 0.65 1.0 V F F C V =1.0V, f=1.0MHz 7.0 pF J R t I =I =10mA, I =1.0mA, R=100 5.0 ns rr F R rr L Enhanced specification. Additional Enhanced specification. R3 (11-February 2016)CMDSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-323 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode MARKING CODE: S1E R3 (11-February 2016) www.centralsemi.com