CMPSH-3SE TR Central Semiconductor

CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE www.centralsemi.com DESCRIPTION: ENHANCED SPECIFICATION The CENTRAL SEMICONDUCTOR CMPSH-3E Series SURFACE MOUNT types are Enhanced Versions of the CMPSH-3 Series SILICON SCHOTTKY DIODES of Silicon Schottky Diodes in an SOT-23 Surface Mount Package. FEATURED ENHANCED SPECIFICATIONS: I from 100mA max to 200mA max. F BV from 30V min to 40V min. R SOT-23 CASE V from 1.0V max to 0.8V max. F CMPSH-3E: SINGLE MARKING CODE: D95E CMPSH-3AE: DUAL, COMMON ANODE MARKING CODE: DB1E CMPSH-3CE: DUAL, COMMON CATHODE MARKING CODE: DB2E CMPSH-3SE: DUAL, IN SERIES MARKING CODE: DA5E MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Peak Repetitive Reverse Voltage V 40 V RRM Continuous Forward Current I 200 mA F Peak Repetitive Forward Voltage I 350 mA FRM Forward Surge Current, tp=10ms I 750 mA FSM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=25V 90 500 nA R R I V =25V, T=100C 25 100 A R R A BV I=100A 40 50 V R R V I=2.0mA 0.29 0.33 V F F V I=15mA 0.37 0.42 V F F V I=100mA 0.61 0.80 V F F V I=200mA 0.65 1.0 V F F C V =1.0V, f=1.0MHz 7.0 pF T R t I =I =10mA, I =1.0mA, R=100 5.0 ns rr F R rr L Enhanced specification Additional Enhanced specification R3 (27-January 2010) CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE LEAD CODE: LEAD CODE: LEAD CODE: LEAD CODE: 1) Anode 1) Cathode D2 1) Anode D2 1) Anode D2 2) No Connection 2) Cathode D1 2) Anode D1 2) Cathode D1 3) Cathode 3) Anode D1, D2 3) Cathode D1, D2 3) Anode D1, Cathode D2 MARKING CODE: D95E MARKING CODE: DB1E MARKING CODE: DB2E MARKING CODE: DA5E R3 (27-January 2010) www.centralsemi.com