CSICD10-1200 TR13 Central Semiconductor

CSICD10-1200 SURFACE MOUNT www.centralsemi.com SILICON CARBIDE DESCRIPTION: SCHOTTKY RECTIFIER The CENTRAL SEMICONDUCTOR CSICD10-1200 10 AMP, 1200 VOLT is a silicon carbide Schottky rectifier designed for high frequency systems where energy efficiency and thermal performance are critical design elements. MARKING CODE: SICD1200 DPAK-2L Case APPLICATIONS: FEATURES: Power inverters Low profile package Motor drives Low switching loss Switch-mode power supplies Stable switching over temperature extremes Power factor correction MAXIMUM RATINGS: (T =25C unless otherwise noted) C SYMBOL UNITS Peak Repetitive Reverse Voltage V 1200 V RRM Peak Reverse Surge Voltage V 1200 V RSM DC Blocking Voltage V 1200 V R Average Rectified Forward Current (T=157C) I 10 A C O Continuous Forward Current (T=157C) I 10 A C F Peak Forward Surge Current, tp=10ms I 120 A FSM Single Pulse Avalanche Energy (Note 1) E 88 mJ AS Power Dissipation P 150 W D Power Dissipation (T=157C) P 42 W C D Operating and Storage Junction Temperature T , T -55 to +175 C J stg Thermal Resistance 1.6 C/W JC Note 1: L=10mH, I =4.1A, V =100V, Initial T =25C PK DD J ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) J SYMBOL TEST CONDITIONS TYP MAX UNIT I V=1200V 100 640 A R R I V =1200V, T=175C 1.0 mA R R J V I=10A 1.4 1.6 V F F V I =10A, T=150C 1.85 2.3 V F F J V I =10A, T=175C 2.0 2.6 V F F J Q V=800V 51 nC C R C V =1.0V, f=1.0MHz 510 pF J R C V =400V, f=1.0MHz 48 pF J R C V =800V, f=1.0MHz 41 pF J R R3 (13-October 2017)CSICD10-1200 SURFACE MOUNT SILICON CARBIDE SCHOTTKY RECTIFIER 10 AMP, 1200 VOLT DPAK-2L CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Cathode 2) Anode Tab) Cathode MARKING CODE: SICD1200 R3 (13-October 2017) www.centralsemi.com