CSICD10-650 BK Central Semiconductor

CSICD10-650 SURFACE MOUNT www.centralsemi.com SILICON CARBIDE DESCRIPTION: SCHOTTKY RECTIFIER The CENTRAL SEMICONDUCTOR CSICD10-650 is a 10 AMP, 650 VOLT silicon carbide Schottky rectifier designed for high frequency systems where energy efficiency and thermal performance are critical design elements. MARKING: FULL PART NUMBER DPAK CASE APPLICATIONS: Power inverters FEATURES: Industrial motor drives Positive temperature coefficient High reverse voltage Switch-mode power supplies High operating temperature (175C MAX) Power factor correction Stable switching over temperature extremes Over-current protection MAXIMUM RATINGS: (T =25C unless otherwise noted) C SYMBOL UNITS Peak Repetitive Reverse Voltage V 650 V RRM Peak Reverse Surge Voltage V 650 V RSM DC Blocking Voltage V 650 V R Continuous Forward Current (T=135C) I 10 A C F Peak Forward Surge Current, tp=8.3ms I 60 A FSM Power Dissipation P 93 W D Power Dissipation (T=135C) P 25 W C D Operating and Storage Junction Temperature T , T -55 to +175 C J stg Thermal Resistance 1.6 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) J SYMBOL TEST CONDITIONS MIN TYP MAX UNIT I V=650V 70 125 A R R I V =650V, T=175C 150 500 A R R J BV I=500A 650 V R R V I=10A 1.5 1.7 V F F V I =10A, T=175C 2.1 2.5 V F F J Q V =400V, I =10A, di/dt=250A/s 16 nC C R F C V =1.0V, f=1.0MHz 295 325 pF J R C V =300V, f=1.0MHz 31 pF J R C V =600V, f=1.0MHz 28 pF J R R1 (24-November 2014)CSICD10-650 SURFACE MOUNT SILICON CARBIDE SCHOTTKY RECTIFIER 10 AMP, 650 VOLT DPAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Cathode 3) Anode 4) Cathode Pin 2 is common to the tab (4) MARKING: FULL PART NUMBER R1 (24-November 2014) www.centralsemi.com