BAW56 Changjing Electronics Technology

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAW56 High-speed double diode 1999 May 11 Product specication Supersedes data of 1996 Sep 17Philips Semiconductors Product specication High-speed double diode BAW56 FEATURES DESCRIPTION PINNING Small plastic SMD package The BAW56 consists of two PIN DESCRIPTION high-speed switching diodes with High switching speed: max. 4 ns 1 cathode (k1) common anodes, fabricated in planar Continuous reverse voltage: 2 cathode (k2) technology, and encapsulated in the max. 75 V small SOT23 plastic SMD package. 3 common anode Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: handbook, 4 columns21 max. 450 mA. APPLICATIONS 21 High-speed switching in thick and thin-film circuits. 3 3 MAM206 Top view Marking code: A1p = made in Hong Kong A1t = made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode V repetitive peak reverse voltage - 85 V RRM V continuous reverse voltage - 75 V R I continuous forward current single diode loaded note 1 - 215 mA F see Fig.2 double diode loaded note 1 - 125 mA see Fig.2 repetitive peak forward current - 450 mA I FRM I non-repetitive peak forward square wave T =25 C prior to FSM j current surge see Fig.4 t=1 s - 4A t=1ms - 1A t=1s - 0.5 A P total power dissipation T =25 C note 1 - 250 mW tot amb T storage temperature - 65 +150 C stg T junction temperature - 150 C j Note 1. Device mounted on an FR4 printed-circuit board. 1999 May 11 2