X-On Electronics has gained recognition as a prominent supplier of BSS138 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS138 MOSFETs are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS138 Changjing Electronics Technology

BSS138 electronic component of Changjing Electronics Technology
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See Product Specifications
Part No. BSS138
Manufacturer: Changjing Electronics Technology
Category: MOSFETs
Description: MOSFET N Trench 50V 220mA 1.5V @ 1mA 3.5 Ω @ 220mA,10V SOT-23 (SOT-23-3) RoHS
Datasheet: BSS138 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 0.0228 ea
Line Total: USD 0.46 
Availability - 255907
Ship by Fri. 13 Sep to Wed. 18 Sep
MOQ: 20  Multiples: 20
Pack Size: 20

 BSS138 More Buying Options & Price Grid(s)

Availability Price Quantity
255907
Ship by Fri. 13 Sep to Wed. 18 Sep
MOQ : 20
Multiples : 20
20 : USD 0.0228
200 : USD 0.0178
600 : USD 0.0157
3000 : USD 0.0136
9000 : USD 0.0131
21000 : USD 0.0125

Specifications

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
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We are delighted to provide the BSS138 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS138 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET I SO T-23 V R MAX D (BR)DSS DS(on) 3.5 10 V 5 0 V 220m A 1. GATE 6 4.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION z Direct Logic-Level Interface: TTL/CMOS z High density cell design for extremely low R DS(on) z Drivers: Relays, Solenoids, Lamps, Hammers,Display, z Rugged and Relaible Memories, Transistors, etc. Battery Operated Systems z z Solid-State Relays Equivalent Circuit MARKING Maximum ratings (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 50 DS V Continuous Gate-Source Voltage V 20 GSS Continuous Drain Current I 0.22 A D Power Dissipation P 0.35 D W Thermal Resistance from Junction to Ambient R 357 /W JA Operating Temperature T 150 j Storage Temperature T -55 ~+150 stg www.cj-elec.com 1 D,Apr,2015MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Units Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 50 V Gate-body leakage I VDS =0V, VGS =20V 100 nA GSS V =50V, V =0V 0.5 DS GS A Zero gate voltage drain current I DSS VDS =30V, VGS =0V 100 nA On characteristics Gate-threshold voltage (note 1) VGS(th) VDS =V , ID =1mA 0.80 1.50 V GS VGS =10V, ID =0.22A 3.50 Static drain-source on-resistance (note 1) RDS(on) VGS =4.5V, ID =0.22A 6 Forward transconductance (note 1) g VDS =10V, ID =0.22A 0.12 S FS Dynamic characteristics (note 2) Input capacitance C 27 iss VDS =25V,VGS =0V, f=1MHz pF Output capacitance C 13 oss Reverse transfer capacitance C 6 rss Switching characteristics Turn-on delay time (note 1,2) td(on) 5 Rise time (note 1,2) tr V =30V, V =10V, 18 DD DS ns Turn-off delay time (note 1,2) td(off) ID =0.29A,R =6 36 GEN Fall time (note 1,2) tf 14 Drain-source body diode characteristics Body diode forward voltage (note 1) V I =0.44A, VGS = 0V 1.4 V SD S Notes: 1. Pulse Test Pulse Width 300s, Duty Cycle 2%. 2. These parameters have no way to verify. www.cj-elec.com 2 E,May,2015

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Changjiang Electronics Tech (CJ) may also be referenced as

CJ
Jiangsu Changjing Electronics Technology
Jiangsu Changjing Electronics Technology Co., Ltd.

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