BSS84 Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs BSS84 P-CHANNEL MOSFET I V R MAX D (BR)DSS DS(on) SOT-23 8 -10V 3 -50 V -0.13 A -5V 10 1 DESCRIPTION 2 These miniature surface mount MOSFETs reduce power loss conserve 1. GATE energy, making this device ideal for use in small power management circuitry. 2. SOURCE 3. DRAIN FEATURE z Energy Efficient z Low Threshold Voltage z High-speed Switching z Miniature Surface Mount Package Saves Board Space APPLICATION z DCDC converters,load switching, power management in portable and battery powered products such as computers, printers, cellular and cordless telephones. MARKING Equivalent Circuit MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V -50 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I -0.13 A D Pulsed Drain Current (note 1) tp <10 s I -0.52 A DM Power Dissipation P 225 mW D Thermal Resistance from Junction to Ambient (note 2) R 556 JA /W Junction Temperature T 150 J Storage Temperature T -55~+150 STG Maximum Lead Temperature for Soldering Purposes , Duration T 260 L for 5 Seconds www.cj-elec.com 1 A,Apr,201 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =-250A -50 V VDS =-50V,VGS = 0V -15 A Zero gate voltage drain current IDSS VDS =-25V,VGS = 0V -0.1 A Gate-body leakage current IGSS VGS =20V, VDS = 0V 5 A Gate threshold voltage (note 3) VGS(th) VDS =V , ID =-250A -0.9 -1.6 -2 V GS VGS =-5V, ID =-0.1A 5.8 10 Drain-source on-resistance (note 3) RDS(on) VGS =-10V, ID =-0.1A 4.5 8 Forward transconductance (note 1) g V =-25V I =-100mA 50 mS FS DS D DYNAMIC CHARACTERISTICS (note 4) Input capacitance C 30 pF iss Output capacitance C VDS =5V,VGS =0V,f =1MHz 10 pF oss Reverse transfer capacitance C 5 pF rss SWITCHING CHARACTERISTICS (note 4) Turn-on delay time td(on) 2.5 ns Turn-on rise time tr V =-15V, 1 ns DD R =50, ID =-2.5A Turn-off delay time td(off) L 16 ns Turn-off fall time tf 8 ns SOURCE DRAIN DIODE CHARACTERISTICS Continuous Current I -0.13 A S Pulsed Current I -0.52 A SM Diode forward voltage (note 3) VSD I =-0.13A, VGS = 0V -2.2 V S Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t 10s. 3. Pulse Test : Pulse Width300s, Duty Cycle2%. 4. Guaranteed by design, not subject to producting. www.cj-elec.com 2 SU