JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2305 P-Channel MOSFET I V R MAX D SOT-23 (BR)DSS DS(on) 45m -4.5 V -12 V 60m -2.5V -4.1 A 1. GATE 90m -1.8V 2. SOURCE 3. DRAIN APPLICATION FEATURE z z Load Switch for Portable Devices TrenchFET Power MOSFET z DC/DC Converter MARKING Equivalent Circuit Maximum ratings (T =25 unless otherwise noted) a Symbol Value Unit Parameter Drain-Source Voltage V -12 DS V Gate-Source Voltage V 8 GS Continuous Drain Current I -4.1 D A Continuous Source-Drain Diode Current I -0.8 S Maximum Power Dissipation P 0.35 W D Thermal Resistance from Junction to Ambient(t 10s) R 357 /W JA Junction Temperature T 150 J Storage Temperature T -50 ~+150 STG www.cj-elec.com 1 F,Apr,2015 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -12 V Gate-source threshold voltage VGS(th) VDS =V , ID =-250A -0.5 -0.9 GS 100 Gate-source leakage I VDS =0V, VGS =8V nA GSS -1 Zero gate voltage drain current I VDS =-8V, VGS =0V A DSS VGS =-4.5V, ID =-3.5A 30 45 a Drain-source on-state resistance RDS(on) VGS =-2.5V, ID =-3A 40 60 m 60 90 VGS =-1.8V,ID=-2.0A a Forward transconductance gfs VDS =-5V, ID =-4.1A 6 S Dynamic b,c Input capacitance C 740 iss b,c Output capacitance C VDS =-4V,VGS =0V,f =1MHz 290 pF oss b,c Reverse transfer capacitance C 190 rss VDS =-4V,VGS =-4.5V, 7.8 15 b Total gate charge Q ID =-4.1A g 4.5 9 nC VDS =-4V,VGS =-2.5V, b Gate-source charge Q 1.2 gs ID =-4.1A b Gate-drain charge Q 1.6 gd b,c Gate resistance R f =1MHz 1.4 7 14 g b,c Turn-on delay time td(on) 13 20 V =-4V, DD b,c Rise time tr 35 53 R =1.2, ID -3.3A, L b,c Turn-off Delay time td(off) 32 48 V =-4.5V,Rg=1 GEN b,c Fall time tf 10 20 ns b,c Turn-on delay time td(on) 5 10 V =-4V, DD b,c Rise time tr 11 17 R =1.2, ID -3.3A, L b,c Turn-off delay time td(off) 22 33 V =-8V,Rg=1 GEN b,c Fall time tf 16 24 Drain-source body diode characteristics -1.4 Continuous source-drain diode current I T =25 S C A a Pulse diode forward current I -10 SM Body ciode voltage V I =-3.3A -1.2 V SD F Note : a. Pulse Test Pulse Width 300s, Duty Cycle 2%. b. Guaranteed by design, not subject to production testing. c. These parameters have no way to verify. www.cj-elec.com 2 F,Apr,2015