JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2307 P-Channel 30-V(D-S) MOSFET I V R MAX D SOT-23 (BR)DSS DS(on) 88m -10 V -30 V -2.7 A 1. GATE 138m -4.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION z TrenchFET Power MOSFET Load Switch for Portable Devices z MARKING Equivalent Circuit Maximum ratings ( T =25 unless otherwise noted) a . Symbol Value Unit Parameter Drain-Source Voltage V -30 DS V Gate-Source Voltage V 20 GS a,b Continuous Drain Current I -2.7 D A a,b Continuous Source-Drain Current I -0.91 S a,b Power Dissipation P 1.1 W D Thermal Resistance from Junction to Ambient (t5s) R 114 /W JA Operating Junction Temperature T 150 J Storage Temperature T -55 ~+150 stg www.cj-elec.com 1 E,Apr,2015 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID =-250A -30 V Gate-Source Threshold Voltage VGS(th) VDS =V , ID =-250A -1 -3 GS Gate-Source Leakage I VDS =0V, VGS =20V 100 nA GSS VDS =-30V, VGS =0V -1 Zero Gate Voltage Drain Current I A DSS VDS =-30V, VGS =0V, T =55 -10 J 0.110 VGS =-4.5V, ID =-2.5A 0.138 c Drain-Source On-State Resistance RDS(on) VGS =-10V, ID =-3.5A 0.073 0.088 c Forward Transconductance g VDS =-10V, ID =-3.5A 7 S fs d Dynamic Input Capacitance C 340 iss Output Capacitance C VDS =-15V,VGS =0V,f =1MHz 67 pF oss Reverse Transfer Capacitance C 51 rss Total Gate Charge Q 4.1 6.2 g VDS =-15V,VGS =-4.5V, Gate-Source Charge Q 1.3 nC gs ID =-2.5A Gate-Drain Charge Q 1.8 gd Gate Resistance R f =1MHz 10 g Turn-On Delay Time td(on) 40 60 V =-15V, DD Rise Time tr 40 60 R =15, ID =-1A, ns L Turn-Off Delay Time td(off) 20 40 V =-4.5V,Rg=1 GEN Fall Time tf 17 30 Drain-source Body diode characteristics Body Diode Voltage V I =-0.75A, ,VGS =0 -0.8 -1.2 V SD S Notes: a. t=5s. b. Surface mounted on 1 1 FR4 board. c. Pulse Test : Pulse Width < 300s, Duty Cycle 2%. d. Guaranteed by design, not subject to production testing. www.cj-elec.com 2 E,Apr,2015