JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2310 N-Channel MOSFET I SOT-23 V R MAX D (BR)DSS DS(on) 10 V 105m 6 0 V 3 A 1. GATE 125m 4.5V 2. SOURCE 3. DRAIN DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent R , low gate charge and operation with gate voltage as low as 2.5V. DS(ON) This device is suitable for use as a battery protection or in other switching application. FEATURE APPLICATION High power and current handing capability Battery Switch Lead free product is acquired DC/DC Converter Surface mount package MARKING Equivalent Circuit Maximum ratings (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 3 A D Pulsed Drain Current (note 1) I 10 A DM Power Dissipation P 0.35 W D Thermal Resistance from Junction to Ambient (note 2) R 357 /W JA Junction Temperature T 150 J Storage Temperature T -55~+150 STG www.cj-elec.com 1 E,Apr,2015 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250A 60 V Zero gate voltage drain current IDSS VDS =60V,VGS = 0V 1 A Gate-body leakage current IGSS VGS =20V, VDS = 0V 100 nA V Gate threshold voltage (note 3) VGS(th) VDS =V , ID =250A 0.5 2 GS VGS =10V, ID =3A 105 m Drain-source on-resistance (note 3) RDS(on) VGS =4.5V, ID =3A 125 m S Forward tranconductance (note 3) gFS VDS =15V, ID =2A 1.4 1.2 Diode forward voltage (note 3) V I =3A, VGS = 0V V SD S DYNAMIC CHARACTERISTICS (note 4) Input Capacitance C 247 pF iss VDS =30V,VGS =0V,f =1MHz pF Output Capacitance C 34 oss Reverse Transfer Capacitance C 19.5 pF rss SWITCHING CHARACTERISTICS (note 4) Turn-on delay time td(on) 6 ns Turn-on rise time tr 15 ns V =10V,V =30V, GS DD I =1.5A,R =1 Turn-off delay time td(off) D GEN 15 ns Turn-off fall time tf 10 ns Total Gate Charge Q 6 nC g Gate-Source Charge Q VDS =30V,VGS =4.5V,ID =3A 1 nC gs Gate-Drain Charge Q 1.3 nC gd Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t 10s. 3. Pulse Test : Pulse Width300s, Duty Cycle0.5%. 4. Guaranteed by design, not subject to producting. www.cj-elec.com 2 E,Apr,2015