JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400 N-Channel Enhancement Mode Field Effect Transistor SO T-23 FEATURE 1. GATE z High dense cell design for extremely low R DS(ON) 2. SOURCE z Exceptional on-resistance and maximum DC current capability 3. DRAIN MARKING: R0 =25 unless otherwise noted) Maximum ratings ( T a Parameter Symbol Value Unit Drain-Source Voltage V 30 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current I 5.8 A D Drain Current-Pulsed (note 1) I 30 A DM Power Dissipation P 350 mW D Thermal Resistance from Junction to Ambient (note 2) R 357 JA /W Junction Temperature T 150 J Storage Temperature T -55~+150 STG A,Dec,2010 Electrical characteristics (T =25 unless otherwise noted) a Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250A 30 V Zero gate voltage drain current IDSS VDS =24V,VGS = 0V 1 A Gate-source leakage current IGSS VGS =12V, VDS = 0V 100 nA On characteristics VGS =10V, ID =5.8A 35 m Drain-source on-resistance RDS(on) VGS =4.5V, ID =5A 40 m (note 3) VGS =2.5V,ID=4A 52 m 8 Forward tranconductance gFS VDS =5V, ID =5A S Gate threshold voltage VGS(th) VDS =V , ID =250A 0.7 1.4 V GS Dynamic Characteristics (note 4,5) Input capacitance Ciss 1050 pF Output capacitance Coss VDS =15V,VGS =0V,f =1MHz 99 pF Reverse transfer capacitance Crss 77 pF Gate resistance Rg VDS =0V,VGS =0V,f =1MHz 3.6 Switching Characteristics (note 4,5) Turn-on delay time td(on) 5 ns Turn-on rise time tr V =10V,V =15V, 7 ns GS DS R =2.7,R =3 Turn-off delay time td(off) 40 ns L GEN Turn-off fall time tf 6 ns Drain-source diode characteristics and maximum ratings Diode forward voltage (note 3) V I =1A,V =0V 1 V SD S GS Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width300s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production testing. A,Dec,2010