X-On Electronics has gained recognition as a prominent supplier of CJ3400A MOSFETs across the USA, India, Europe, Australia, and various other global locations. CJ3400A MOSFETs are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CJ3400A Changjing Electronics Technology

CJ3400A electronic component of Changjing Electronics Technology
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Part No.CJ3400A
Manufacturer: Changjing Electronics Technology
Category: MOSFETs
Description: MOSFET N Trench 30V 5.8A 1.4V @ 250uA 32 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
Datasheet: CJ3400A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.068 ea
Line Total: USD 0.68 
Availability - 5852
Ship by Wed. 11 Dec to Mon. 16 Dec
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
5852
Ship by Wed. 11 Dec to Mon. 16 Dec
MOQ : 10
Multiples : 10
10 : USD 0.068
100 : USD 0.0563
300 : USD 0.0505
3000 : USD 0.0432
6000 : USD 0.0397
9000 : USD 0.0379

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CJ3400A from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CJ3400A and other electronic components in the MOSFETs category and beyond.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400A N-Channel Enhancement Mode Field Effect Transistor SOT-23 I V R MAX D (BR)DSS DS(on) 10 V 32m V 38m 4.5V 3 0 5.8 A 1. GATE 45m 2.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION z High dense cell design for extremely low R DS(ON) z Load/Power Switching z Exceptional on-resistance and maximum DC current capability z Interfacing Switching MARKING Equivalent Circuit Maximum ratings ( T =25 unless otherwise noted) a Symbol Unit Parameter Value Drain-Source Voltage V 30 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current I 5.8 A D Drain Current-Pulsed (note 1) I 30 A DM Power Dissipation P 400 mW D Thermal Resistance from Junction to Ambient (note 2) R 313 /W JA Junction Temperature T 150 J Storage Temperature T -55~+150 STG www.cj-elec.com 1 E,Apr,2015MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250A 30 V Zero gate voltage drain current IDSS VDS =24V,VGS = 0V 1 A Gate-source leakage current IGSS VGS =12V, VDS = 0V 100 nA On characteristics (note 3) VGS =10V, ID =5.8A m 29 32 Drain-source on-resistance 38 RDS(on) VGS =4.5V, ID =5A 32 m (note 3) VGS =2.5V,ID=4A 45 m 40 Forward tranconductance gFS VDS =5V, ID =5A 8 S Gate threshold voltage VGS(th) VDS =V , ID =250A 0.7 1.4 V GS Dynamic Characteristics (note 4,5) Input capacitance Ciss 1155 pF Output capacitance Coss VDS =15V,VGS =0V,f =1MHz 108 pF Reverse transfer capacitance Crss 84 pF Gate resistance Rg VDS =0V,VGS =0V,f =1MHz 3.6 Switching Characteristics (note 4,5) Turn-on delay time td(on) 5 ns Turn-on rise time tr 7 ns V =10V,V =15V, GS DS R =2.7,R =3 Turn-off delay time td(off) L GEN 40 ns Turn-off fall time tf 6 ns Drain-source diode characteristics and maximum ratings Diode forward voltage (note 3) V I =1A,V =0V 1 V SD S GS Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width300s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production testing. www.cj-elec.com 2 E,Apr,2015

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
CJ
Jiangsu Changjing Electronics Technology
Jiangsu Changjing Electronics Technology Co., Ltd.
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