JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor I V R MAX D (BR)DSS DS(on) SO T-23 m 60 - 10V 70 m -4.2A - 30V -4.5V m -2.5V 85 FEATURE APPLICATION z High dense cell design for extremely low R DS(ON) z Load Switch for Portable Devices z z Exceptional on-resistance and maximum z DC/DC Converter DC current capability Equivalent Circuit MARKING D G S Maximum ratings ( T =25 unless otherwise noted) a Unit Value Parameter Symbol Drain-Source Voltage V -30 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current I -4.2 A D Power Dissipation P 400 D mW Thermal Resistance from Junction to Ambient (t<5s)R 313 /W JA Junction Temperature T 150 J Storage Temperature T -55~+150 STG www.cj-elec.com 1 B,Apr,2015 A,Dec,2010 MOSFET ELECTRICAL CHARACTERISTICS unless otherwise specified T =25 a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -30 V Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 A Gate-source leakage current IGSS VGS =12V, VDS = 0V 100 nA On characteristics m VGS =-10V, ID =-4.2A 41 60 Drain-source on-resistance RDS(on) VGS =-4.5V, ID =-4A 47 70 m (note 1) VGS =-2.5V,ID=-1A 61 85 m Forward tranconductance (note 1) gFS VDS =-5V, ID =-5A 7 S Gate threshold voltage VGS(th) VDS =V , ID =-250A -0.7 -1.3 V GS Dynamic characteristics (note 2) Input capacitance Ciss 1050 pF VDS =-15V,VGS =0V,f =1MHz Output capacitance Coss 127 pF Reverse transfer capacitance Crss 85 pF Switching characteristics (note 2) Turn-on delay time td(on) 6.5 ns Turn-on rise time tr 3.5 ns V =-10V,V =-15V, GS DS R =3.6,R =6 Turn-off delay time td(off) L GEN 40 ns Turn-off fall Time tf 13 ns Drain-source diode characteristics and maximum ratings Diode forward voltage (note 1) V I =-1A,V =0V -1 V SD S GS Note : 1. Pulse Test : Pulse width 300s, duty cycle 2%. 2. These parameters have no way to verify. www.cj-elec.com 2 B,Apr,2015