JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs CJ3406 N-Channel Enhancement Mode Field Effect Transistor I V R MAX D (BR)DSS DS(on) SO T-23 65 m 10V 30V 3.6A m 4.5V 105 1. GATE 2. SOURCE 3. DRAIN DESCRIPTION The CJ3406 use advanced trench technology to provide excellent R and low gate charge. This device is suitable for use as a DS(ON) load switch or in PWM applications. Equivalent Circuit MARKING R6 Maximum ratings ( T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 3.6 A D Drain Current-Pulsed (note 1) I 15 A DM Power Dissipation P 0.35 W D Thermal Resistance from Junction to Ambient R 357 /W JA Junction Temperature T 150 J Storage Temperature T -55~ +150 STG www.cj-elec.com 1 B, Mar,2015 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Units STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250A 30 V Zero gate voltage drain current IDSS VDS =24V,VGS = 0V 1 A Gate-body leakage current IGSS VGS =20V, VDS = 0V 100 nA Gate threshold voltage VGS(th) VDS =V , ID =250A 1 3 V GS VGS =10V, ID =3.6A 65 m Drain-source on-resistance (note 2) RDS(on) VGS =4.5V, ID =2.8A 105 m Forward tranconductance (note 2) gFS VDS =5V, ID =3.6A 3 S Diode forward voltage V I =1A 1 V SD S DYNAMIC PARAMETERS (note 3) Input capacitance Ciss 375 pF Output capacitance Coss VDS =15V,VGS =0V,f =1MHz 57 pF Reverse transfer capacitance Crss 39 pF Gate resistance Rg VDS =0V,VGS =0V,f =1MHz 6 SWITCHING PARAMETERS (note 3) Turn-on delay time td(on) 4.6 ns Turn-on rise time tr V =10V,V =15V, 1.9 ns GS DS R =2.2,R =3 Turn-off delay time td(off) L GEN 20.1 ns f Turn-off fall time t 2.6 ns Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Pulse Test : Pulse width 300s, duty cycle 0.5%. 3. These parameters have no way to verify. www.cj-elec.com 2 B,Mar,2015