X-On Electronics has gained recognition as a prominent supplier of CJ8810 MOSFETs across the USA, India, Europe, Australia, and various other global locations. CJ8810 MOSFETs are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CJ8810 Changjing Electronics Technology

CJ8810 electronic component of Changjing Electronics Technology
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Part No.CJ8810
Manufacturer: Changjing Electronics Technology
Category: MOSFETs
Description: MOSFET N Trench 20V 7A 1V @ 250uA 26 mΩ @ 7A,10V SOT-23 (SOT-23-3) RoHS
Datasheet: CJ8810 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.0845 ea
Line Total: USD 0.42 
Availability - 4775
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
4775
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.0845
50 : USD 0.0677
150 : USD 0.0592
500 : USD 0.0528
3000 : USD 0.0476
6000 : USD 0.0451

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
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We are delighted to provide the CJ8810 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CJ8810 and other electronic components in the MOSFETs category and beyond.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ8810 N-Channel MOSFET I V R MAX D SOT-23 (BR)DSS DS(on) 10 2 6 m V 2 7m 4.5V m 3.8V 30 7 A 20V 2 .5V 33 m 45 m 1.8V 1.GATE 2.SOURCE 3.DRAIN APPLICATION FEATURE z Surface Mount Package z Load/ Power Switching z Low R (on) DS Smallz Portable Electronics z ESD Protected Gate Equivalent Circuit MARKING MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter Value Unit Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current I 7 A D Pulsed Drain Current I * 30 A DM Thermal Resistance from Junction to Ambient R 417 JA /W Junction Temperature T 150 j Storage Temperature T -55~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T 260 L *Repetitive ratingPluse width limited by junction temperature. www.cj-elec.com 1 F,Apr,2015T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250A 20 V Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 A VGS =4.5V, VDS = 0V 1 A Gate-body leakage current IGSS VGS =8V, VDS = 0V 10 A Gate threshold voltage (note 1) VGS(th) VDS =V , ID =250A 0.4 1 V GS VGS =10V, ID =7A 26 m VGS =4.5V, ID =6.6A 27 m Drain-source on-resistance (note 1) RDS(on) VGS =3.8V, ID =6A 30 m VGS =2.5V, ID =5.5A 33 m VGS =1.8V, ID =5A 45 m 9 Forward tranconductance (note 1) gFS VDS =5V, ID =7A S 1 Diode forward voltage(note 1) V I =1A, VGS = 0V V SD S DYNAMIC PARAMETERS (note 2) Input Capacitance C 1150 pF iss Output Capacitance C VDS =10V,VGS =0V,f =1MHz 185 pF oss Reverse Transfer Capacitance C 145 pF rss Total gate charge Q 15 nC g nC Gate-source charge Q VDS =10V,VGS =4.5V,ID =7A 0.8 gs nC Gate-drain charge Q 3.2 gd SWITCHING PARAMETERS(note 2) Turn-on delay time td(on) 6 ns Turn-on rise time tr 13 ns V =5V,V =10V, GS DD Turn-off delay time td(off) R =1.35,R =3 52 ns L GEN Turn-off fall time tf 16 ns Notes : 1. Pulse Test : Pulse width 300s, duty cycle 0.5%. 2. Guaranteed by design, not subject to production testing. ZZZ FM HOHF FRP F,Apr,2015 026)(7 (/(&75,& / &+ 5 &7(5,67,&6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Jiangsu Changjing Electronics Technology
Jiangsu Changjing Electronics Technology Co., Ltd.
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