JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA9451 P-Channel 20-V(D-S) MOSFET SO T-89- 3L Description The Advanced Power MOSFETs provide the desigher with the best combination of fast switching, ruggedized device desigh, ultra low 1. GATE on- resistance and cost-effectiveness. 2. DRAIN 3. SOURCE 1 2 2 3 Maximum ratings (T =25 unless otherwise noted) a Parameter Value Units Symbol Drain-Source Voltage V -20 DS V Continuous Gate-Source Voltage V 12 GS Continuous Drain Current I -2.3 A D Power Dissipation P 0.5 W D Thermal Resistance from Junction to Ambient R 250 JA /W Operating Temperature T 150 j Storage Temperature T -55 ~+150 stg B,Aug,2011 Electrical characteristics (T =25 unless otherwise noted) a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =10A -20 V Gate-body leakage I VDS =0V, VGS =12V 100 nA GSS Zero gate voltage drain current I VDS =-20V, VGS =0V -1.0 A DSS On characteristics Gate-threshold voltage VGS(th) VDS =V , ID =-0.25mA -0.50 -1.50 V GS VGS =-4.5V, ID =-2.3A 0.135 Static drain-source on-resistance (note 1) RDS(on) VGS =-2.5V, ID =-1.0A 0.240 Forward transconductance (note 1) g VDS =-5V, ID =-2.3A 2.3 S fs Dynamic characteristics (note 2) Input capacitance C 430 iss Output capacitance C VDS =-20V,VGS =0V, f=1MHz 100 pF oss Reverse transfer capacitance C 35 rss Switching characteristics Turn-on delay time (note 1,2) td(on) 9 Rise time (note 2) tr V =-5V, V =-10V, 25 GS DS ns ID =-1A,R =3.3, R =10 Turn-off delay time (note 2) td(off) G D 20 Fall time (note 2) tf 10 Drain-source body diode characteristics Body diode forward voltage (note 1) V I =-1A, VGS = 0V -1.6 V SD S Notes: 1. Pulse Test Pulse Width 300s, Duty Cycle 2%. 2. These parameters have no way to verify. B,Aug,2011