JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03E Plastic-Encap sulate MOSFETS CJAA3139K P-Channel MOSFET WBFBP-03E I V R MAX D (BR)DSS DS(on) m 52 0 -4.5V -20V -2.5V -0.66A 70 0m 95 m (TYP) -1.8V 0 1.GATE 2.SOURCE 3.DRAIN FEATURE APPLICATION z Lead Free Product is Acquired z Load/ Power Switching z Surface Mount Package z Interfacing Switching z P-Channel Switch with Low R (on) DS z Battery Management for Ultra Small z Operated at Low Logic Level Gate Drive Portable Electronics z ESD Protected Gate z Complementary to CJAA3134K z Logic Level Shift MARKING: Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V -20 V DS Typical Gate-Source Voltage V 12 V GS Continuous Drain Current (note 1) I -0.66 A D Pulsed Drain Current (tp=10us) I -1.2 A DM Power Dissipation (note 2) P 100 mW D Thermal Resistance from Junction to Ambient (note 1) R 1250 /W JA Junction Temperature T 150 J Storage Temperature T -55~ 150 STG Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T 260 L Rev. - 1.0 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -20 V Zero gate voltage drain current IDSS VDS =-20V,VGS = 0V -1 A Gate-body leakage current IGSS VGS =10V, VDS = 0V 20 uA Gate threshold voltage (note 2) VGS(th) VDS =V , ID =-250A -0.35 -1.1 V GS VGS =-4.5V, ID =-1A 430 520 m Drain-source on-resistance(note 2) RDS(on) VGS =-2.5V, ID =-0.8A 700 m 624 VGS =-1.8V, ID =-0.5A 950 m Forward tranconductance(note 2) gFS VDS =-10V, ID =-0.54A 1.2 S Diode forward voltage V I =-0.5A, VGS = 0V -1.2 V SD S DYNAMIC PARAMETERS(note 4) 170 Input Capacitance C 113 pF iss Output Capacitance C VDS =-16V,VGS =0V,f =1MHz 15 25 pF oss Reverse Transfer Capacitance C 9 15 pF rss SWITCHING PARAMETERS (note 4) Turn-on delay time (note 3) td(on) 9 ns Turn-on rise time (note 3) tr V =-4.5V,V =-10V, 5.8 ns DD GS I =-200mA,R =10 Turn-off delay time (note 3) td(off) D GEN 32.7 ns Turn-off fall time (note 3) tf 20.3 ns Notes : 1.Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse width=300s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Graranted by designnot subject to producting. www.jscj-elec.com Rev. - 1.0 2