JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN:%56-8L Plastic-Encapsulate MOSFETS CJAC 110N03 N-Channel Power MOSFET I V R TYP D (BR)DSS DS(on) PDFN5:% 6-8L 10V 1. 8 m 3 0 V 110A 3.5m 4.5V DESCRIPTION 7KH &- & 1 XVHV DGYDQFHG WUHQFK WHFKQRORJ DQG GHVLJQ WR SURYLGH H FHOOHQW 5 ZLWK ORZ JDWH FKDUJH ,W FDQ EH XVHG 6 21 LQ D ZLGH YDULHW RI DSSOLFDWLRQV FEATURES U VZ H W W FKL D W % L ( J K K P L Z I K L Q W U G X R Q L VW W D E D G L O R L W R * 6 VZ G D FK L W R / L Q VVL L S G RW W D D H K I G J U J R S FND H R R W D Q O O H FH ( Z O R VL OU I J W D 5 U H X O Q R OG FH VL W Q H + L G J K 6 L I ( J U K J K R O R R Q FK H W VV S O S FL FH 6 D U H R 2 1 6 G Q D Y J D O H H W R FK Y U G Q L D H O H FW D U D D D FK O O ) X S L E W FD D L O W U Q U FX H APPLICATIONS V Q L S R W O L D FDS J S O Q U U S D VH H X H G R Q D 0 6 6 3 S Z S O R X E 3 U 6 U S O H U H LH X W W L 8Q Q FL VL U W FX F L I G J Q K Q T K H U D H X Z G H V FK L U W + G D EQUIVALENT CIRCUIT MARKING D D D D 8 7 6 5 &- & 1 3DUW 1R CJAC 6ROLG dot = Pin1 indicator 1 10N03 XX XX = Code 1 2 3 4 S S S G MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Parameter Symbol Limit Unit Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 110 A D Pulsed Drain Current I 440 A DM Single Pulsed Avalanche Energy E 800 mJ AS Thermal Resistance from Junction to Ambient /W 62.5 R JA Thermal Resistance from Junction to Case R /W JC 1.04 Power Dissipation P 120 W D Junction Temperature T 150 J Storage Temperature Range T -55 ~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10s) TL 260 Rev. - 1.1 www.jscj-elec.com 1MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250A 30 V 1 Zero gate voltage drain current I VDS =24V, VGS =0V A DSS Gate-body leakage current I VDS =0V, VGS =20V 100 nA GSS On characteristics Gate-threshold voltage VGS(th) VDS =V , ID =250A 1.0 1.7 2.5 V GS VGS =10V, ID =30A 2.4 m 1.8 Static drain-source on-sate resistance RDS(on) VGS =4.5V, ID =20A m 3.5 4.3 Forward transconductance g VDS =10V, ID =2A S FS 17 Dynamic characteristics Input capacitance C 4830 iss VDS =15V,VGS =0V, Output capacitance C 677 pF oss f =1MHz Reverse transfer capacitance C 639 rss Gate resistance Rg 0.6 f =1MHz Switching characteristics Total gate charge Q 42.5 g V =4.5V, V =15V, GS DS nC Gate-source charge Q 12.9 gs I =24A D Gate-drain charge Q 23.4 gd Turn-on delay time td 10 (on) Turn-on rise time tr 6.5 V =15V,R =0.75, DS L ns V =10V,R =3 GS G Turn-off delay time td(off) 75 Turn-off fall time tf 18 Drain-Source Diode Characteristics Drain-source diode forward voltage V VGS =0V, I =10A 1.0 V SD S Continuous drain-source diode forward I 110 A S current Pulsed drain-source diode forward current I 440 A SM Notes: 1.T =25 Limited only by maximum temperature allowed. C 2.P 10s, Duty cycle1%. W 3.EAS condition: V =15V,V =10V, L=0.5mH, Rg=25 Starting T = 25. DD GS J 4.Pulse Test : Pulse Width300s, duty cycle 2%. 5.Guaranteed by design, not subject to production. 6.The value of R is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air JA environment with T =25 . a Rev. - 1.1 www.jscj-elec.com 2