JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS CJE3139K P-Channel MOSFET I V R MAX D (BR)DSS DS(on) SOT-523 520 m -4.5V -20V -0.66A 700m -2.5V 950m(TYP) -1.8V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION z Lead Free Product is Acquired z Load/Power Switching z Surface Mount Package z Interfacing, Logic Switching z P-Channel Switch with Low R (on) DS z Battery Management for Ultra Small z Operated at Low Logic Level Gate Drive Portable Electronics MARKING Equivalent Circuit D G S Maximum ratings (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V -20 V DS Typical Gate-Source Voltage V 12 V GS Continuous Drain Current (note 1) I -0.66 A D Pulsed Drain Current (t =10s) I -1.2 A DM p Power Dissipation (note 1) P 150 mW D Thermal Resistance from Junction to Ambient (note 1) R 833 /W JA Junction Temperature T 150 J Storage Temperature T -55~+150 STG Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T 260 L www.cj-elec.com 1 A,Sep,2015MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =-250A -20 V Zero gate voltage drain current IDSS VDS =-20V,VGS = 0V -1 A Gate-body leakage current IGSS VGS =10V, VDS = 0V 20 A Gate threshold voltage (note 2) VGS(th) VDS =V , ID =-250A -0.35 -1.1 V GS VGS =-4.5V, ID =-1A 520 m Drain-source on-resistance (note 2) RDS(on) VGS =-2.5V, ID =-0.8A 700 m VGS =-1.8V, ID =-0.5A 950 m Forward transconductance (note 2) gFS VDS =-10V, ID =-0.54A 1.2 S -1.2 Diode forward voltage V I =-0.5A, VGS = 0V V SD S DYNAMIC CHARACTERISTICS (note 4) Input capacitance C 113 170 pF iss Output capacitance C VDS =-16V,VGS =0V,f =1MHz 15 25 pF oss Reverse transfer capacitance C 9 15 pF rss SWITCHING CHARACTERISTICS (note 4) Turn-on delay time (note 3) td(on) 9 ns Turn-on rise time (note 3) tr V =-4.5V,V =-10V, 5.8 ns GS DS ID =-200mA,R =10 Turn-off delay time (note3) td(off) GEN 32.7 ns Turn-off fall time (note 3) tf 20.3 ns Notes : 1. Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse Width=300s, Duty Cycle=2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Guaranteed by design, not subject to producting. www.cj-elec.com 2 A,Sep,2015