JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK34 07 P-Channel 30-V(D-S) MOSFET SOT-23-3L I V R MAX D (BR)DSS DS(on) 60m -10 V -4.1A -30V 87 m -4.5V 1. GATE 2. SOURCE 3. DRAIN D General Description The CJK3407 uses advanced trench technology to provide excellent R with low gate charge. This device is suitable for use as a load DS(on) switch or in PWM applications. Equivalent Circuit MARKING Units Maximum ratings (T =25 unless otherwise noted) a Parameter Value Units Symbol Drain-Source voltage V -30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I -4.1 A D Drain Current-Pulsed I -20 A DM Power Dissipation P 300 D mW Thermal Resistance from Junction to Ambient R 417 /W JA Junction Temperature T 150 J Storage Temperature T -55~ +150 STG www.cj-elec.com 1 D,Aug,2015 MOSFET ELECTRICAL CHARACTERISTICS unless otherwise specified T =25 a Parameter Symbol Test Condition Min Typ Max Unit Static characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250A -30 V Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 A Gate -source leakage current IGSS VGS =20V, VDS = 0V 100 nA VGS =-10V, ID =-4.1A 50 60 m Drain-source on-resistance (note 1) RDS(on) VGS =-4.5V, ID =-3A 68 87 m Forward tranconductance (note 1) gFS VDS =-5V, ID =-4A 5.5 S Gate threshold voltage VGS(th) VDS =V , ID =-250A -1 -1.4 -3 V GS Diode forward voltage (note 1) V I =-1A,V =0V -1 V SD S GS Dynamic characteristics (note 2) Input capacitance Ciss 700 pF Output capacitance Coss VDS =-15V,VGS =0V,f =1MHz 120 pF Reverse transfer capacitance Crss 75 pF Switching characteristics (note 2) Turn-on delay time t 8.6 ns d(on) Turn-on rise time tr V =-10V,V =-15V, 5.0 ns GS DS R =3.6,R =3 Turn-off delay time td(off) L GEN 28.2 ns Turn-off fall time tf 13.5 ns Notes: 1. Pulse test: Pulse width 300s, Duty cycle 2%. 2. These parameter have no way to verify. www.cj-elec.com 2 D,Aug,2015